フォロー
Joao Marcelo J. Lopes
Joao Marcelo J. Lopes
確認したメール アドレス: pdi-berlin.de - ホームページ
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引用先
引用先
Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC (0001)
F Fromm, MH Oliveira Jr, A Molina-Sánchez, M Hundhausen, JMJ Lopes, ...
New Journal of Physics 15 (4), 043031, 2013
1552013
Formation of high-quality quasi-free-standing bilayer graphene on SiC (0 0 0 1) by oxygen intercalation upon annealing in air
MH Oliveira Jr, T Schumann, F Fromm, R Koch, M Ostler, M Ramsteiner, ...
Carbon 52, 83-89, 2013
1492013
Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
S Nakhaie, JM Wofford, T Schumann, U Jahn, M Ramsteiner, M Hanke, ...
Applied Physics Letters 106 (21), 2015
1092015
Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric
JMJ Lopes, M Roeckerath, T Heeg, E Rije, J Schubert, S Mantl, ...
Applied physics letters 89 (22), 2006
1082006
Molecular beam epitaxy of GaN nanowires on epitaxial graphene
S Fernández-Garrido, M Ramsteiner, G Gao, LA Galves, B Sharma, ...
Nano letters 17 (9), 5213-5221, 2017
782017
Influence of the silicon carbide surface morphology on the epitaxial graphene formation
MH Oliveira, T Schumann, M Ramsteiner, JMJ Lopes, H Riechert
Applied Physics Letters 99 (11), 2011
772011
Amorphous ternary rare-earth gate oxides for future integration in MOSFETs
JMJ Lopes, ED Özben, M Roeckerath, U Littmark, R Luptak, M Luysberg, ...
Microelectronic engineering 86 (7-9), 1646-1649, 2009
702009
Mono-and few-layer nanocrystalline graphene grown on Al2O3 (0 0 0 1) by molecular beam epitaxy
MH Oliveira Jr, T Schumann, R Gargallo-Caballero, F Fromm, T Seyller, ...
Carbon 56, 339-350, 2013
662013
A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures
JM Wofford, S Nakhaie, T Krause, X Liu, M Ramsteiner, M Hanke, ...
Scientific reports 7 (1), 43644, 2017
642017
Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces
T Schumann, KJ Friedland, MH Oliveira Jr, A Tahraoui, JMJ Lopes, ...
Physical Review B 85 (23), 235402, 2012
602012
Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3
VV Afanas’ev, S Shamuilia, M Badylevich, A Stesmans, LF Edge, W Tian, ...
Microelectronic engineering 84 (9-10), 2278-2281, 2007
582007
Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces
MH Oliveira, Jr, JMJ Lopes, T Schumann, LA Galves, M Ramsteiner, ...
Nature Communications 6 (1), 7632, 2015
562015
Acousto-electric transport in epitaxial monolayer graphene on SiC
PV Santos, T Schumann, MH Oliveira, JMJ Lopes, H Riechert
Applied physics letters 102 (22), 2013
562013
Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC (0001)
T Schumann, M Dubslaff, MH Oliveira Jr, M Hanke, JMJ Lopes, H Riechert
Physical Review B 90 (4), 041403, 2014
532014
Cluster coarsening and luminescence emission intensity of Ge nanoclusters in layers
JMJ Lopes, FC Zawislak, M Behar, PFP Fichtner, L Rebohle, W Skorupa
Journal of applied physics 94 (9), 6059-6064, 2003
482003
La-based ternary rare-earth oxides as alternative high-κ dielectrics
JMJ Lopes, M Roeckerath, T Heeg, U Littmark, J Schubert, S Mantl, Y Jia, ...
Microelectronic engineering 84 (9-10), 1890-1893, 2007
442007
Coincident-site lattice matching during van der Waals epitaxy
JE Boschker, LA Galves, T Flissikowski, JMJ Lopes, H Riechert, ...
Scientific Reports 5 (1), 18079, 2015
432015
Spectrally narrow exciton luminescence from monolayer MoS2 and MoSe2 exfoliated onto epitaxially grown hexagonal BN
E Courtade, B Han, S Nakhaie, C Robert, X Marie, P Renucci, T Taniguchi, ...
Applied Physics Letters 113 (3), 2018
392018
Integration of as High- Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process
ED Özben, JMJ Lopes, A Nichau, M Schnee, S Lenk, A Besmehn, ...
IEEE electron device letters 32 (1), 15-17, 2010
392010
Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric
M Roeckerath, T Heeg, JMJ Lopes, J Schubert, S Mantl, A Besmehn, ...
Thin solid films 517 (1), 201-203, 2008
392008
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