| Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016 | 800 | 2016 |
| Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ... Advanced Electronic Materials 2 (9), 1600173, 2016 | 395 | 2016 |
| Lanthanum-doped hafnium oxide: a robust ferroelectric material U Schroeder, C Richter, MH Park, T Schenk, M Pesic, M Hoffmann, ... Inorganic chemistry 57 (5), 2752-2765, 2018 | 326 | 2018 |
| Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories E Yurchuk, J Müller, S Müller, J Paul, M Pešić, R van Bentum, ... IEEE Transactions on Electron Devices 63 (9), 3501-3507, 2016 | 307 | 2016 |
| Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ... Advanced Functional Materials 26 (47), 8643-8649, 2016 | 288 | 2016 |
| Complex internal bias fields in ferroelectric hafnium oxide T Schenk, M Hoffmann, J Ocker, M Pesic, T Mikolajick, U Schroeder ACS applied materials & interfaces 7 (36), 20224-20233, 2015 | 255 | 2015 |
| Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2 M Pešić, M Hoffmann, C Richter, T Mikolajick, U Schroeder Advanced Functional Materials, 2016 | 218 | 2016 |
| Electric field cycling behavior of ferroelectric hafnium oxide T Schenk, U Schroeder, M Pešić, M Popovici, YV Pershin, T Mikolajick ACS applied materials & interfaces 6 (22), 19744-19751, 2014 | 194 | 2014 |
| Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018 | 151 | 2018 |
| On the stabilization of ferroelectric negative capacitance in nanoscale devices M Hoffmann, M Pešić, S Slesazeck, U Schroeder, T Mikolajick Nanoscale 10 (23), 10891-10899, 2018 | 148 | 2018 |
| Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015 | 148 | 2015 |
| Domain pinning: Comparison of hafnia and PZT based ferroelectrics FPG Fengler, M Pešić, S Starschich, T Schneller, C Künneth, U Böttger, ... Advanced Electronic Materials 3 (4), 1600505, 2017 | 130 | 2017 |
| Memory technology—a primer for material scientists T Schenk, M Pešić, S Slesazeck, U Schroeder, T Mikolajick Reports on Progress in Physics 83 (8), 086501, 2020 | 100 | 2020 |
| Ferroelectric negative capacitance domain dynamics M Hoffmann, AI Khan, C Serrao, Z Lu, S Salahuddin, M Pešić, ... Journal of Applied Physics 123 (18), 2018 | 87 | 2018 |
| Comparative study of reliability of ferroelectric and anti-ferroelectric memories M Pešić, U Schroeder, S Slesazeck, T Mikolajick IEEE Transactions on Device and Materials Reliability 18 (2), 154-162, 2018 | 75 | 2018 |
| How to make DRAM non-volatile? Anti-ferroelectrics: A new paradigm for universal memories M Pesic, S Knebel, M Hoffmann, C Richter, T Mikolajick, U Schroeder 2016 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2016 | 70 | 2016 |
| Built-in bias generation in anti-ferroelectric stacks: Methods and device applications M Pešić, T Li, V Di Lecce, M Hoffmann, M Materano, C Richter, B Max, ... IEEE Journal of the Electron Devices Society 6, 1019-1025, 2018 | 64 | 2018 |
| A computational study of hafnia-based ferroelectric memories: From ab initio via physical modeling to circuit models of ferroelectric device M Pešić, C Künneth, M Hoffmann, H Mulaosmanovic, S Müller, ET Breyer, ... Journal of computational Electronics 16, 1236-1256, 2017 | 57 | 2017 |
| Interplay between ferroelectric and resistive switching in doped crystalline HfO2 B Max, M Pešić, S Slesazeck, T Mikolajick Journal of Applied Physics 123 (13), 2018 | 53 | 2018 |
| Hot electrons as the dominant source of degradation for sub-5nm HZO FeFETs AJ Tan, M Pešić, L Larcher, YH Liao, LC Wang, JH Bae, C Hu, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 50 | 2020 |
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU Dresden確認したメール アドレス: namlab.com
