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anisul haque
anisul haque
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Title
Cited by
Cited by
Year
Agrivoltaics analysis in a techno-economic framework: Understanding why agrivoltaics on rice will always be profitable
MS Ahmed, MR Khan, A Haque, MR Khan
Applied Energy 323, 119560, 2022
482022
Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers
A Haque, H Yagi, T Sano, T Maruyama, S Arai
Journal of applied physics 94 (3), 2018-2023, 2003
452003
A comparison of wave-function penetration effects on gate capacitance in deep submicron n-and p-MOSFETs
A Haque, MZ Kauser
IEEE Transactions on Electron Devices 49 (9), 1580-1587, 2002
442002
An efficient technique to calculate the normalized wave functions in arbitrary one-dimensional quantum well structures
A Haque, AN Khondker
Journal of applied physics 84 (10), 5802-5804, 1998
431998
On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides
A Haque, A Rahman, IB Chowdhury
Solid-State Electronics 44 (10), 1833-1836, 2000
392000
GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers fabricated by dry etching and regrowth processes
H Yagi, T Sano, K Ohira, D Plumwongrot, T Maruyama, A Haque, ...
Japanese journal of applied physics 43 (6R), 3401, 2004
372004
Modeling effects of interface traps on the gate C–V characteristics of MOS devices on alternative high-mobility substrates
MM Satter, A Haque
Solid-State Electronics 54 (6), 621-627, 2010
302010
Quantum transport in mesoscopic devices: Current conduction in quantum wire structures
A Haque, AN Khondker
Journal of Applied Physics 87 (5), 2553-2560, 2000
252000
On the Enhancement of the Drain Current in Indium-Rich InGaAs Surface-Channel MOSFETs
ATM Golam Sarwar, MR Siddiqui, MM Satter, A Haque
Electron Devices, IEEE Transactions on 59 (6), 1653-1660, 2012
242012
A physically based accurate model for quantum mechanical correction to the surface potential of nanoscale MOSFETs
MA Karim, A Haque
IEEE Transactions on Electron Devices 57 (2), 496-502, 2009
232009
Accurate modeling of direct tunneling hole current in p-metal–oxide–semiconductor devices
A Haque, K Alam
Applied physics letters 81 (4), 667-669, 2002
212002
Accumulation gate capacitance of MOS devices with ultrathin high-/spl kappa/gate dielectrics: modeling and characterization
AE Islam, A Haque
IEEE transactions on electron devices 53 (6), 1364-1372, 2006
192006
Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs
MMA Hakim, A Haque
IEEE Transactions on Electron Devices 49 (9), 1669-1671, 2002
192002
Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method
H Yagi, T Sano, K Ohira, T Maruyama, A Haque, S Arai
Japanese journal of applied physics 42 (7A), L748, 2003
182003
A critical analysis of bifacial solar farm configurations: Theory and experiments
JB Jahangir, M Al-Mahmud, MSS Shakir, A Haque, MA Alam, MR Khan
IEEE Access 10, 47726-47740, 2022
162022
Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics
MMA Hakim, A Haque
Solid-State Electronics 48 (7), 1095-1100, 2004
162004
Effects of wave function penetration into the gate-oxide on self-consistent modeling of scaled MOSFETs
MZ Kauser, MS Hasan, A Haque
IEEE Transactions on Electron Devices 49 (4), 693-695, 2002
152002
Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal–oxide–semiconductor transistors
K Alam, S Zaman, MM Chowdhury, MR Khan, A Haque
Journal of applied physics 92 (2), 937-943, 2002
142002
A study into the broadening of the quantized inversion layer states in deep submicron MOSFETs
A Rahman, A Haque
Solid-State Electronics 45 (5), 755-760, 2001
132001
A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates
MM Satter, AE Islam, D Varghese, MA Alam, A Haque
Solid-State Electronics 56 (1), 141-147, 2011
122011
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Articles 1–20