| Contact Engineering High-Performance n-Type MoTe2 Transistors MJ Mleczko, AC Yu, CM Smyth, V Chen, YC Shin, S Chatterjee, YC Tsai, ... Nano letters 19 (9), 6352-6362, 2019 | 112 | 2019 |
| Band alignments of ternary wurtzite and zincblende III-nitrides investigated by hybrid density functional theory YC Tsai, C Bayram ACS omega 5 (8), 3917-3923, 2020 | 36 | 2020 |
| Structural and Electronic Properties of Hexagonal and Cubic Phase AlGaInN Alloys Investigated Using First Principles Calculations YC Tsai, C Bayram Scientific Reports 9 (1), 6583, 2019 | 34 | 2019 |
| Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p‐i‐n silicon solar cells MM Rahman, MY Lee, YC Tsai, A Higo, H Sekhar, M Igarashi, ... Progress in Photovoltaics: Research and Applications 24 (6), 774-780, 2016 | 21 | 2016 |
| Impact of doping concentration on electronic properties of transition metal-doped monolayer molybdenum disulfide YC Tsai, Y Li IEEE Transactions on Electron Devices 65 (2), 733-738, 2018 | 17 | 2018 |
| Simulation study of multilayer Si/SiC quantum dot superlattice for solar cell applications YC Tsai, MY Lee, Y Li, MM Rahman, S Samukawa IEEE Electron Device Letters 37 (6), 758-761, 2016 | 15 | 2016 |
| Mitigate self-compensation with high crystal symmetry: A first-principles study of formation and activation of impurities in GaN YC Tsai, C Bayram Computational Materials Science 190, 110283, 2021 | 14 | 2021 |
| Effect of Auger electron–hole asymmetry on the efficiency droop in InGaN quantum well light-emitting diodes YC Tsai, C Bayram, JP Leburton IEEE Journal of Quantum Electronics 58 (1), 1-9, 2021 | 11 | 2021 |
| Design and simulation of intermediate band solar cell with ultradense type-II multilayer Ge/Si quantum dot superlattice YC Tsai, MY Lee, Y Li, S Samukawa IEEE Transactions on Electron Devices 64 (11), 4547-4553, 2017 | 9 | 2017 |
| Miniband formulation in Ge/Si quantum dot array YC Tsai, MY Lee, Y Li, S Samukawa Japanese journal of applied physics 55 (4S), 04EJ14, 2016 | 8 | 2016 |
| Quenching of the efficiency droop in cubic phase InGaAlN light-emitting diodes YC Tsai, JP Leburton, C Bayram IEEE Transactions on Electron Devices 69 (6), 3240-3245, 2022 | 7 | 2022 |
| On electronic structure and geometry of MoX2 (X = S, Se, Te) and black phosphorus by ab initio Simulation with various van der waals corrections YC Tsai, Y Li 2017 International Conference on Simulation of Semiconductor Processes and …, 2017 | 7 | 2017 |
| Effect of ALD-Al2O3Passivated Silicon Quantum Dot Superlattices on p/i/n+Solar Cells MM Rahman, YC Tsai, MY Lee, A Higo, Y Li, Y Hoshi, N Usami, ... IEEE Transactions on Electron Devices 64 (7), 2886-2892, 2017 | 6 | 2017 |
| Tuning of the electron factor in defect-free GaAs nanodisks LW Yang, YC Tsai, Y Li, A Higo, A Murayama, S Samukawa, ... Physical Review B 92 (24), 245423, 2015 | 6 | 2015 |
| Interplay between Auger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes YC Tsai, C Bayram, JP Leburton Journal of Applied Physics 131 (19), 2022 | 5 | 2022 |
| Numerical simulation of physical and electrical characteristics of Ge/Si quantum dots based intermediate band solar cell MY Lee, YC Tsai, Y Li, S Samukawa 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 361-364, 2016 | 5 | 2016 |
| Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold YC Tsai, B Magyari-Köpe, Y Li, S Samukawa, Y Nishi, SM Sze IEEE Journal of the Electron Devices Society 7, 322-328, 2019 | 2 | 2019 |
| First-principles calculations of N-and P-type doping in wurtzite and zincblende GaN YC Tsai, C Bayram Oxide-based Materials and Devices XII 11687, 38-44, 2021 | 1 | 2021 |
| Work function modulation of monolayer MOS2 doped with 3d transition metals YC Tsai, CY Chen, MS Ho, Y Li 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 1 | 2017 |
| Miniband formulation of bilayer type II Ge/Si quantum dot superlattices YC Tsai, MY Lee, Y Li, S Samukawa 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 891-894, 2016 | 1 | 2016 |
