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Tsvetanka Zheleva
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Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
8621997
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied Physics Letters 71 (17), 2472-2474, 1997
6911997
Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition
J Narayan, P Tiwari, X Chen, J Singh, R Chowdhury, T Zheleva
Applied physics letters 61 (11), 1290-1292, 1992
3391992
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
2942000
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
TS Zheleva, SA Smith, DB Thomson, KJ Linthicum, P Rajagopal, ...
Journal of Electronic materials 28 (4), 5-8, 1999
2161999
Transition layers at the SiO2∕ SiC interface
T Zheleva, A Lelis, G Duscher, F Liu, I Levin, M Das
Applied Physics Letters 93 (2), 2008
2012008
Epitaxial growth in large‐lattice‐mismatch systems
T Zheleva, K Jagannadham, J Narayan
Journal of Applied Physics 75 (2), 860-871, 1994
1781994
The composition pulling effect in MOVPE grown InGaN on GaN and AlGaN and its TEM characterization
K Hiramatsu, Y Kawaguchi, M Shimizu, N Sawaki, T Zheleva, RF Davis, ...
MRS Internet Journal of Nitride Semiconductor Research 2, 1-12, 1997
1521997
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
T Zheleva, DB Thomson, SA Smith, KJ Linthicum, T Gehrke, RF Davis
US Patent 6,265,289, 2001
1452001
Deposition factors and band gap of zinc-blende AlN
MP Thompson, GW Auner, TS Zheleva, KA Jones, SJ Simko, JN Hilfiker
Journal of Applied Physics 89 (6), 3331-3336, 2001
1432001
Growth, doping and characterization of AlxGa1− xN thin film alloys on 6H-SiC (0001) substrates
MD Bremser, WG Perry, T Zheleva, NV Edwards, OH Nam, N Parikh, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1996
1431996
Pendeo-epitaxy-A new approach for lateral growth of gallium nitride structures
TS Zheleva, SA Smith, DB Thomson, T Gehrke, KJ Linthicum, ...
MRS Online Proceedings Library (OPL) 537, G3. 38, 1998
1291998
Lateral epitaxial overgrowth of GaN films on SiO 2 areas via metalorganic vapor phase epitaxy
OH Nam, TS Zheleva, MD Bremser, RF Davis
Journal of electronic materials 27 (4), 233-237, 1998
1161998
Sublimation growth and characterization of bulk aluminum nitride single crystals
CM Balkaş, Z Sitar, T Zheleva, L Bergman, R Nemanich, RF Davis
Journal of crystal growth 179 (3-4), 363-370, 1997
1161997
Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobility
TL Biggerstaff, CL Reynolds, T Zheleva, A Lelis, D Habersat, S Haney, ...
Applied Physics Letters 95 (3), 2009
1142009
Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H-SiC (0001) substrates
WG Perry, T Zheleva, MD Bremser, RF Davis, W Shan, JJ Song
Journal of electronic materials 26 (3), 224-231, 1997
1141997
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures
TS Zheleva, OH Nam, WM Ashmawi, JD Griffin, RF Davis
Journal of Crystal Growth 222 (4), 706-718, 2001
992001
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
RF Davis, T Gehrke, KJ Linthicum, TS Zheleva, EA Preble, P Rajagopal, ...
Journal of crystal growth 225 (2-4), 134-140, 2001
882001
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches
T Zheleva, DB Thomson, SA Smith, KJ Linthicum, T Gehrke, RF Davis
US Patent 7,195,993, 2007
762007
Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,602,763, 2003
732003
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