Andrea Cester
Andrea Cester
Department of Information Engineering, Padova University
確認したメール アドレス: dei.unipd.it - ホームページ
タイトル引用先
Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides
M Ceschia, A Paccagnella, A Cester, A Scarpa, G Ghidini
IEEE Transactions on Nuclear Science 45 (6), 2375-2382, 1998
1621998
Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements
G Meneghesso, M Meneghini, D Bisi, I Rossetto, A Cester, UK Mishra, ...
Semiconductor Science and Technology 28 (7), 074021, 2013
542013
Accelerated wear-out of ultra-thin gate oxides after irradiation
A Cester, S Cimino, A Paccagnella, G Ghibaudo, G Ghidini, J Wyss
IEEE Transactions on Nuclear Science 50 (3), 729-734, 2003
482003
Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides
A Cester, L Bandiera, M Ceschia, G Ghidini, A Paccagnella
IEEE Transactions on Nuclear Science 48 (6), 2093-2100, 2001
432001
Drain current decrease in MOSFETs after heavy ion irradiation
A Cester, S Gerardin, A Paccagnella, JR Schwank, G Vizkelethy, ...
IEEE transactions on nuclear science 51 (6), 3150-3157, 2004
422004
Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L
A Cester, S Cimino, A Paccagnella, G Ghidini, G Guegan
2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003
372003
Thermal stress effects on dye-sensitized solar cells (DSSCs)
D Bari, N Wrachien, R Tagliaferro, S Penna, TM Brown, A Reale, ...
Microelectronics Reliability 51 (9-11), 1762-1766, 2011
342011
Collapse of MOSFET drain current after soft breakdown
A Cester, A Paccagnella, G Ghidini, S Deleonibus, G Guegan
IEEE Transactions on Device and Materials Reliability 4 (1), 63-72, 2004
332004
Statistical model for radiation-induced wear-out of ultra-thin gate oxides after exposure to heavy ion irradiation
A Cester, S Cimino, E Miranda, A Candelori, G Ghidini, A Paccagnella
IEEE Transactions on Nuclear Science 50 (6), 2167-2175, 2003
272003
Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides
M Ceschia, A Paccagnella, A Scarpa, A Cester, G Ghidini
Microelectronics Reliability 39 (2), 221-226, 1999
251999
Soft breakdown current noise in ultra-thin gate oxides
A Cester, L Bandiera, G Ghidini, I Bloom, A Paccagnella
Solid-State Electronics 46 (7), 1019-1025, 2002
232002
Influence of shunt resistance on the performance of an illuminated string of solar cells: theory, simulation, and experimental analysis
M Barbato, M Meneghini, A Cester, G Mura, E Zanoni, G Meneghesso
IEEE Transactions on Device and Materials Reliability 14 (4), 942-950, 2014
222014
Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED
A Cester, D Bari, J Framarin, N Wrachien, G Meneghesso, S Xia, ...
Microelectronics Reliability 50 (9-11), 1866-1870, 2010
222010
Total ionizing dose effects on 4 Mbit phase change memory arrays
A Gasperin, N Wrachien, A Paccagnella, F Ottogalli, U Corda, P Fuochi, ...
IEEE Transactions on Nuclear Science 55 (4), 2090-2097, 2008
222008
Systematic characterization of soft-and hard-breakdown spots using techniques with nanometer resolution
M Porti, S Gerardin, M Nafrı, X Aymerich, A Cester, A Paccagnella, ...
Microelectronic engineering 84 (9-10), 1956-1959, 2007
222007
Impact of heavy-ion strikes on minimum-size MOSFETs with ultra-thin gate oxide
S Gerardin, M Bagatin, A Cester, A Paccagnella, B Kaczer
IEEE transactions on nuclear science 53 (6), 3675-3680, 2006
222006
Ionizing radiation effect on ferroelectric nonvolatile memories and its dependence on the irradiation temperature
M Zanata, N Wrachien, A Cester
IEEE Transactions on Nuclear Science 55 (6), 3237-3245, 2008
212008
Electrostatic discharge effects in ultrathin gate oxide MOSFETs
A Cester, S Gerardin, A Tazzoli, G Meneghesso
IEEE Transactions on Device and Materials Reliability 6 (1), 87-94, 2006
212006
Worldwide Outdoor Round Robin Study of Organic Photovoltaic Devices and Modules
Solar Energy Materials and Solar Cells 130, 281-290, 2014
202014
Effects of Positive and Negative Stresses on III–V MOSFETs With Gate Dielectric
N Wrachien, A Cester, YQ Wu, PD Ye, E Zanoni, G Meneghesso
IEEE Electron Device Letters 32 (4), 488-490, 2011
202011
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