| Monolayer II-VI semiconductors: A first-principles prediction H Zheng, XB Li, NK Chen, SY Xie, WQ Tian, Y Chen, H Xia, SB Zhang, ... Physical Review B 92 (11), 115307, 2015 | 266 | 2015 |
| Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization XB Li, NK Chen, XP Wang, HB Sun Advanced Functional Materials 28 (44), 1803380, 2018 | 147 | 2018 |
| Determination of formation and ionization energies of charged defects in two-dimensional materials D Wang, D Han, XB Li, SY Xie, NK Chen, WQ Tian, D West, HB Sun, ... Physical review letters 114 (19), 196801, 2015 | 114 | 2015 |
| Novel Zn-doped SnO 2 hierarchical architectures: synthesis, characterization, and gas sensing properties P Sun, L You, Y Sun, N Chen, X Li, H Sun, J Ma, G Lu CrystEngComm 14 (5), 1701-1708, 2012 | 81 | 2012 |
| First-principles calculations of a robust two-dimensional boron honeycomb sandwiching a triangular molybdenum layer SY Xie, XB Li, WQ Tian, NK Chen, XL Zhang, Y Wang, S Zhang, HB Sun Physical Review B 90 (3), 035447, 2014 | 78 | 2014 |
| High‐throughput screening for phase‐change memory materials YT Liu, XB Li, H Zheng, NK Chen, XP Wang, XL Zhang, HB Sun, S Zhang Advanced Functional Materials 31 (21), 2009803, 2021 | 59 | 2021 |
| Crystalline liquid and rubber-like behavior in Cu nanowires Y Yue, N Chen, X Li, S Zhang, Z Zhang, M Chen, X Han Nano letters 13 (8), 3812-3816, 2013 | 54 | 2013 |
| Electric field analyses on monolayer semiconductors: the example of InSe XP Wang, XB Li, NK Chen, JH Zhao, QD Chen, HB Sun Physical Chemistry Chemical Physics 20 (10), 6945-6950, 2018 | 51 | 2018 |
| Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage YT Huang, NK Chen, ZZ Li, XP Wang, HB Sun, S Zhang, XB Li InfoMat 4 (8), e12341, 2022 | 50 | 2022 |
| Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization NK Chen, XB Li, XP Wang, MJ Xia, SY Xie, HY Wang, Z Song, S Zhang, ... Acta Materialia 90, 88-93, 2015 | 47 | 2015 |
| Directional forces by momentumless excitation and order-to-order transition in peierls-distorted solids: the case of GeTe NK Chen, XB Li, J Bang, XP Wang, D Han, D West, S Zhang, HB Sun Physical Review Letters 120 (18), 185701, 2018 | 46 | 2018 |
| A novel two-dimensional MgB 6 crystal: metal-layer stabilized boron kagome lattice SY Xie, XB Li, WQ Tian, NK Chen, Y Wang, S Zhang, HB Sun Physical Chemistry Chemical Physics 17 (2), 1093-1098, 2015 | 42 | 2015 |
| Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory XP Wang, XB Li, NK Chen, QD Chen, XD Han, S Zhang, HB Sun Acta Materialia 136, 242-248, 2017 | 39 | 2017 |
| Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus D Wang, D Han, XB Li, NK Chen, D West, V Meunier, S Zhang, HB Sun Physical Review B 96 (15), 155424, 2017 | 36 | 2017 |
| Metal–insulator transition of Ge–Sb–Te superlattice: an electron counting model study NK Chen, XB Li, XP Wang, SY Xie, WQ Tian, S Zhang, HB Sun IEEE Transactions on Nanotechnology 17 (1), 140-146, 2017 | 33 | 2017 |
| Metal–insulator transition of Ge–Sb–Te superlattice: an electron counting model study NK Chen, XB Li, XP Wang, SY Xie, WQ Tian, S Zhang, HB Sun IEEE Transactions on Nanotechnology 17 (1), 140-146, 2017 | 33 | 2017 |
| Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3 XP Wang, XB Li, NK Chen, B Chen, F Rao, S Zhang Advanced Science 8 (13), 2004185, 2021 | 32 | 2021 |
| Strong electron-polarized atom chain in amorphous phase-change memory GeSbTe alloy NK Chen, XB Li, XP Wang, WQ Tian, S Zhang, HB Sun Acta Materialia 143, 102-106, 2018 | 27 | 2018 |
| Role of the nano amorphous interface in the crystallization of Sb 2 Te 3 towards non-volatile phase change memory: Insights from first principles XP Wang, NK Chen, XB Li, Y Cheng, XQ Liu, MJ Xia, ZT Song, XD Han, ... Physical Chemistry Chemical Physics 16 (22), 10810-10815, 2014 | 25 | 2014 |
| Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport D Wang, D Han, D West, NK Chen, SY Xie, WQ Tian, V Meunier, S Zhang, ... NPJ Computational Materials 5 (1), 8, 2019 | 24 | 2019 |
Xian-Bin Li (李贤斌)Professor, DEE, Jilin University (吉林大学)確認したメール アドレス: jlu.edu.cn
