フォロー
Riccardo Frisenda
Riccardo Frisenda
Department of Physics, Sapienza University, Roma
確認したメール アドレス: uniroma1.it - ホームページ
タイトル
引用先
引用先
Bandgap engineering of two-dimensional semiconductor materials
A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ...
npj 2D Materials and Applications 4 (1), 29, 2020
7442020
Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
R Frisenda, E Navarro-Moratalla, P Gant, DP De Lara, P Jarillo-Herrero, ...
Chemical Society Reviews 47 (1), 53-68, 2018
6312018
Atomically thin p–n junctions based on two-dimensional materials
R Frisenda, AJ Molina-Mendoza, T Mueller, A Castellanos-Gomez, ...
Chemical Society Reviews 47 (9), 3339-3358, 2018
2892018
Signatures of quantum interference effects on charge transport through a single benzene ring
CR Arroyo, S Tarkuc, R Frisenda, JS Seldenthuis, CHM Woerde, ...
Angewandte Chemie International Edition 52 (11), 3152-3155, 2013
2882013
Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides
R Frisenda, M Drüppel, R Schmidt, SM de Vasconcellos, DP de Lara, ...
npj 2D Materials and Applications 1, 2017
2372017
Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
Y Niu, S Gonzalez-Abad, R Frisenda, P Marauhn, M Drüppel, P Gant, ...
Nanomaterials 8 (9), 725, 2018
2152018
Thickness‐Dependent Refractive Index of 1L, 2L, and 3L MoS2, MoSe2, WS2, and WSe2
C Hsu, R Frisenda, R Schmidt, A Arora, SM De Vasconcellos, ...
Advanced optical materials 7 (13), 1900239, 2019
2102019
Large negative differential conductance in single-molecule break junctions
ML Perrin, R Frisenda, M Koole, JS Seldenthuis, JAC Gil, H Valkenier, ...
Nature nanotechnology 9 (10), 830-834, 2014
2032014
Mechanically Controlled Quantum Interference in Individual π-stacked Dimers
R Frisenda, V Jansen, FC Grozema, HSJ van der Zant, N Renaud
Nature Chemistry 8, 1099-1104, 2016
2012016
A strain tunable single-layer MoS2 photodetector
P Gant, P Huang, DP de Lara, D Guo, R Frisenda, A Castellanos-Gomez
Materials Today 27, 8-13, 2019
2002019
The role of traps in the photocurrent generation mechanism in thin InSe photodetectors
Q Zhao, W Wang, F Carrascoso-Plana, W Jie, T Wang, ...
Materials horizons 7 (1), 252-262, 2020
1992020
Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials
R Frisenda, Y Niu, P Gant, AJ Molina-Mendoza, R Schmidt, R Bratschitsch, ...
Journal of Physics D: Applied Physics 50 (7), 2017
1802017
Single‐molecule spin switch based on voltage‐triggered distortion of the coordination sphere
GD Harzmann, R Frisenda, HSJ van der Zant, M Mayor
Angewandte Chemie International Edition 54 (45), 13425-13430, 2015
1702015
Kondo effect in a neutral and stable all organic radical single molecule break junction
R Frisenda, R Gaudenzi, C Franco, M Mas-Torrent, C Rovira, J Veciana, ...
Nano letters 15 (5), 3109-3114, 2015
1382015
Stretching-induced conductance increase in a spin-crossover molecule
R Frisenda, GD Harzmann, JA Celis Gil, JM Thijssen, M Mayor, ...
Nano letters 16 (8), 4733-4737, 2016
1132016
Localized and dispersive electronic states at ordered FePc and CoPc chains on Au (110)
MG Betti, P Gargiani, R Frisenda, R Biagi, A Cossaro, A Verdini, ...
The Journal of Physical Chemistry C 114 (49), 21638-21644, 2010
1092010
Naturally occurring van der Waals materials
R Frisenda, Y Niu, P Gant, M Muñoz, A Castellanos-Gomez
npj 2D Materials and Applications 4 (1), 38, 2020
992020
Revisiting the buckling metrology method to determine the Young's modulus of 2D materials
N Iguiñiz, R Frisenda, R Bratschitsch, A Castellanos‐Gomez
Advanced Materials 31 (10), 1807150, 2019
912019
Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2
F Carrascoso, H Li, R Frisenda, A Castellanos-Gomez
Nano Research 14, 1698-1703, 2021
862021
InSe: a two-dimensional semiconductor with superior flexibility
Q Zhao, R Frisenda, T Wang, A Castellanos-Gomez
Nanoscale 11 (20), 9845-9850, 2019
862019
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