| AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018 | 206 | 2018 |
| Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes F Mehnke, C Kuhn, M Guttmann, C Reich, T Kolbe, V Kueller, A Knauer, ... Applied Physics Letters 105 (5), 2014 | 132 | 2014 |
| Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ... Applied Physics Letters 107 (14), 2015 | 100 | 2015 |
| Degradation effects of the active region in UV-C light-emitting diodes J Glaab, J Haefke, J Ruschel, M Brendel, J Rass, T Kolbe, A Knauer, ... Journal of Applied Physics 123 (10), 2018 | 67 | 2018 |
| High-power UV-B LEDs with long lifetime J Rass, T Kolbe, N Lobo-Ploch, T Wernicke, F Mehnke, C Kuhn, J Enslin, ... Gallium Nitride Materials and Devices X 9363, 182-194, 2015 | 62 | 2015 |
| Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire N Susilo, E Ziffer, S Hagedorn, L Cancellara, C Netzel, NL Ploch, S Wu, ... Photonics Research 8 (4), 589-594, 2020 | 61 | 2020 |
| MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs C Kuhn, L Sulmoni, M Guttmann, J Glaab, N Susilo, T Wernicke, ... Photonics Research 7 (5), B7-B11, 2019 | 61 | 2019 |
| Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm M Guttmann, F Mehnke, B Belde, F Wolf, C Reich, L Sulmoni, T Wernicke, ... Japanese Journal of Applied Physics 58 (SC), SCCB20, 2019 | 60 | 2019 |
| Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates N Lobo-Ploch, F Mehnke, L Sulmoni, HK Cho, M Guttmann, J Glaab, ... Applied Physics Letters 117 (11), 2020 | 57 | 2020 |
| Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs F Mehnke, M Guttmann, J Enslin, C Kuhn, C Reich, J Jordan, S Kapanke, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (2), 29-36, 2016 | 56 | 2016 |
| Improved injection efficiency in 290 nm light emitting diodes with Al (Ga) N electron blocking heterostructure T Kolbe, F Mehnke, M Guttmann, C Kuhn, J Rass, T Wernicke, M Kneissl Applied Physics Letters 103 (3), 2013 | 56 | 2013 |
| Metamorphic Al0. 5Ga0. 5N: Si on AlN/sapphire for the growth of UVB LEDs J Enslin, F Mehnke, A Mogilatenko, K Bellmann, M Guttmann, C Kuhn, ... Journal of Crystal Growth 464, 185-189, 2017 | 48 | 2017 |
| Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs C De Santi, M Meneghini, D Monti, J Glaab, M Guttmann, J Rass, ... Photonics Research 5 (2), A44-A51, 2017 | 45 | 2017 |
| Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs J Glaab, N Lobo-Ploch, HK Cho, T Filler, H Gundlach, M Guttmann, ... Scientific reports 11 (1), 14647, 2021 | 42 | 2021 |
| Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm F Mehnke, L Sulmoni, M Guttmann, T Wernicke, M Kneissl Applied Physics Express 12 (1), 012008, 2019 | 40 | 2019 |
| Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers L Sulmoni, F Mehnke, A Mogilatenko, M Guttmann, T Wernicke, M Kneissl Photonics Research 8 (8), 1381-1387, 2020 | 39 | 2020 |
| Effect of the GaN: Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs N Susilo, J Enslin, L Sulmoni, M Guttmann, U Zeimer, T Wernicke, ... physica status solidi (a) 215 (10), 1700643, 2018 | 29 | 2018 |
| Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs M Guttmann, A Susilo, L Sulmoni, N Susilo, E Ziffer, T Wernicke, M Kneissl Journal of Physics D: Applied Physics 54 (33), 335101, 2021 | 21 | 2021 |
| Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes J Glaab, J Ruschel, F Mehnke, M Lapeyrade, M Guttmann, T Wernicke, ... Semiconductor Science and Technology 33 (9), 095017, 2018 | 21 | 2018 |
| Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs J Glaab, J Ruschel, N Lobo Ploch, HK Cho, F Mehnke, L Sulmoni, ... Journal of Applied Physics 131 (1), 2022 | 19 | 2022 |
