Eduard Cartier
Eduard Cartier
Research Staff Member, IBM Research, T. J. Watson Research Center
確認したメール アドレス: us.ibm.com
タイトル
引用先
引用先
Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
MV Fischetti, DA Neumayer, EA Cartier
Journal of Applied Physics 90 (9), 4587-4608, 2001
8312001
Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
DJ DiMaria, E Cartier, D Arnold
Journal of Applied Physics 73 (7), 3367-3384, 1993
8161993
Mechanism for stress‐induced leakage currents in thin silicon dioxide films
DJ DiMaria, E Cartier
Journal of Applied physics 78 (6), 3883-3894, 1995
6181995
Materials characterization of and binary oxides deposited by chemical solution deposition
DA Neumayer, E Cartier
Journal of Applied Physics 90 (4), 1801-1808, 2001
5662001
High-resolution depth profiling in ultrathin films on Si
EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk
Applied Physics Letters 76 (2), 176-178, 2000
4772000
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ...
Microelectronic Engineering 59 (1-4), 341-349, 2001
4522001
Atomic beam deposition of lanthanum-and yttrium-based oxide thin films for gate dielectrics
S Guha, E Cartier, MA Gribelyuk, NA Bojarczuk, MC Copel
Applied Physics Letters 77 (17), 2710-2712, 2000
4152000
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ...
IEEE Electron Device Letters 24 (2), 87-89, 2003
3972003
Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen
E Cartier, JH Stathis, DA Buchanan
Applied physics letters 63 (11), 1510-1512, 1993
3771993
Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
3692001
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel
Journal of Applied Physics 90 (12), 6466-6475, 2001
3452001
Theory of high-field electron transport and impact ionization in silicon dioxide
D Arnold, E Cartier, DJ DiMaria
Physical Review B 49 (15), 10278, 1994
3381994
Threshold voltage instabilities in high-/spl kappa/gate dielectric stacks
S Zafar, A Kumar, E Gusev, E Cartier
IEEE Transactions on Device and Materials Reliability 5 (1), 45-64, 2005
3272005
Formation of a stratified lanthanum silicate dielectric by reaction with Si (001)
M Copel, E Cartier, FM Ross
Applied Physics Letters 78 (11), 1607-1609, 2001
2912001
Surgical positioning system
E Cosman
US Patent App. 10/043,584, 2002
2572002
Anode hole injection and trapping in silicon dioxide
DJ DiMaria, E Cartier, DA Buchanan
Journal of applied physics 80 (1), 304-317, 1996
2351996
Switching of ferroelectric polarization in epitaxial BaTiO 3 films on silicon without a conducting bottom electrode
C Dubourdieu, J Bruley, TM Arruda, A Posadas, J Jordan-Sweet, ...
Nature nanotechnology 8 (10), 748-754, 2013
2032013
Atomic hydrogen reactions with P b centers at the (100) Si/SiO 2 interface
JH Stathis, E Cartier
Physical review letters 72 (17), 2745, 1994
1831994
Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/gate dielectrics
A Kerber, E Cartier, L Pantisano, M Rosmeulen, R Degraeve, T Kauerauf, ...
2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003
1772003
Reliability challenges for CMOS technology qualifications with hafnium oxide/titanium nitride gate stacks
A Kerber, EA Cartier
IEEE Transactions on Device and Materials Reliability 9 (2), 147-162, 2009
1762009
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