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Yashwanth Balaji
Yashwanth Balaji
Hardware Engineer
Adresse e-mail validée de oxfordquantumcircuits.com
Titre
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Année
Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors
GV Resta, Y Balaji, D Lin, IP Radu, F Catthoor, PE Gaillardon, ...
ACS nano 12 (7), 7039-7047, 2018
1182018
Polarity control in WSe2 double-gate transistors
GV Resta, S Sutar, Y Balaji, D Lin, P Raghavan, I Radu, F Catthoor, ...
Scientific reports 6 (1), 29448, 2016
912016
Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures
D Chiappe, I Asselberghs, S Sutar, S Iacovo, V Afanas' ev, A Stesmans, ...
Advanced Materials Interfaces 3 (4), 1500635, 2016
792016
Formation mechanism of 2D SnS 2 and SnS by chemical vapor deposition using SnCl 4 and H 2 S
H Zhang, Y Balaji, AN Mehta, M Heyns, M Caymax, I Radu, ...
Journal of Materials Chemistry C 6 (23), 6172-6178, 2018
652018
MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts
Y Balaji, Q Smets, Á Śzabo, M Mascaro, D Lin, I Asselberghs, I Radu, ...
Advanced Functional Materials 30 (4), 1905970, 2020
592020
Molecular doping of MoS2 transistors by self-assembled oleylamine networks
CJ Lockhart De La Rosa, R Phillipson, J Teyssandier, J Adisoejoso, ...
Applied Physics Letters 109 (25), 2016
532016
Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures
Y Balaji, Q Smets, CJL De La Rosa, AKA Lu, D Chiappe, T Agarwal, ...
IEEE Journal of the Electron Devices Society 6, 1048-1055, 2018
442018
Devices and circuits using novel 2-D materials: a perspective for future VLSI systems
GV Resta, A Leonhardt, Y Balaji, S De Gendt, PE Gaillardon, G De Micheli
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 27 (7 …, 2019
312019
On the van der Waals epitaxy of homo-/heterostructures of transition metal dichalcogenides
W Mortelmans, A Nalin Mehta, Y Balaji, S Sergeant, R Meng, M Houssa, ...
ACS applied materials & interfaces 12 (24), 27508-27517, 2020
242020
Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2
W Mortelmans, AN Mehta, Y Balaji, S El Kazzi, S Sergeant, M Houssa, ...
2D Materials 7 (2), 025027, 2020
162020
Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy
W Mortelmans, S El Kazzi, B Groven, A Nalin Mehta, Y Balaji, S De Gendt, ...
Applied Physics Letters 117 (3), 2020
152020
Demonstration of 2e12 cm− 2 eV− 1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5 nm EOT
A Gaur, Y Balaji, D Lin, C Adelmann, J Van Houdt, M Heyns, D Mocuta, ...
Microelectronic Engineering 178, 145-149, 2017
122017
Towards high-performance polarity-controllable FETs with 2D materials
GV Resta, JR Gonzalez, Y Balaji, T Agarwal, D Lin, F Catthor, IP Radu, ...
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 637-641, 2018
52018
Tunnel FETs using Phosphorene/ReS2 heterostructures
Y Balaji, Q Smets, D Lin, I Asselberghs, I Radu, G Groeseneken
2019 Device Research Conference (DRC), 113-114, 2019
22019
Qubit frequency tuning via electron-beam irradiation
C Shelly, Y Balaji, N Acharya, R Armstrong, K Crawford, S Danilin, ...
Bulletin of the American Physical Society, 2024
2024
Electron-beam annealing of Josephson junctions for frequency tuning of quantum processors
Y Balaji, N Acharya, R Armstrong, KG Crawford, S Danilin, T Dixon, ...
arXiv preprint arXiv:2402.17395, 2024
2024
Heterojunction Tunnel FETS using 2D Materials as Channel
Y Balaji
2020
Novel Insights into the Homo-/Heteroepitaxy of van der Waals Materials
W Mortelmans, A Nalin Mehta, Y Balaji, K De Smet, S El Kazzi, M Houssa, ...
2020
2019 Index IEEE Transactions on Very Large Scale Integration Systems (VLSI) Vol. 27
A Afzalian, I Agbo, J Aghassi-Hagmann, A Agrawal, M Ahmadi, ...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 27 (12), 2019
2019
Preferential in-plane alignment, twinning and strain in hetero-and homo-epitaxial growth of 2D selenides
W Mortelmans, A Nalin Mehta, Y Balaji, S El Kazzi, D Vanhaeren, ...
2019
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