| The influence of crucible and crystal rotation on the sapphire single crystal growth interface shape in a resistance heated Czochralski system MJ Hur, XF Han, DS Song, TH Kim, NJ Lee, YJ Jeong, KW Yi Journal of crystal growth 385, 22-27, 2014 | 23 | 2014 |
| Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon X Liu, H Harada, Y Miyamura, X Han, S Nakano, S Nishizawa, K Kakimoto Journal of Crystal Growth 532, 125404, 2020 | 15 | 2020 |
| Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model X Liu, H Harada, Y Miyamura, X Han, S Nakano, S Nishizawa, K Kakimoto Journal of Crystal Growth 532, 125405, 2020 | 14 | 2020 |
| Numerical simulation of the gallium nitride thin film layer grown on 6-inch wafer by commercial multi-wafer hydride vapor phase epitaxy XF Han, MJ Hur, JH Lee, Y Lee, C Oh, KW Yi Journal of crystal growth 406, 53-58, 2014 | 13 | 2014 |
| Numerical simulation of a novel method for PVT growth of SiC by adding a graphite block H Luo, X Han, Y Huang, D Yang, X Pi Crystals 11 (12), 1581, 2021 | 11 | 2021 |
| Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth X Liu, H Harada, Y Miyamura, X Han, S Nakano, S Nishizawa, K Kakimoto Journal of Crystal Growth 499, 8-12, 2018 | 11 | 2018 |
| 3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth XF Han, X Liu, S Nakano, H Harada, Y Miyamura, K Kakimoto Journal of Crystal Growth 532, 125403, 2020 | 10 | 2020 |
| 3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon XF Han, X Liu, S Nakano, H Harada, Y Miyamura, K Kakimoto Journal of Crystal Growth 483, 269-274, 2018 | 7 | 2018 |
| Numerical analysis on fluid flow and heat transfer in the smelting furnace of mitsubishi process for Cu refining J Park, S Park, X Han, K Yi Metals and Materials International 22, 118-128, 2016 | 7 | 2016 |
| 3D global heat transfer model on floating zone for silicon single crystal growth XF Han, X Liu, S Nakano, H Harada, Y Miyamura, K Kakimoto Crystal Research and Technology 53 (5), 1700246, 2018 | 6 | 2018 |
| Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system MJ Hur, XF Han, HG Choi, KW Yi Journal of Crystal Growth 474, 24-30, 2017 | 6 | 2017 |
| Dislocation-related leakage-current paths of 4H silicon carbide W Gao, G Yang, Y Qian, X Han, C Cui, X Pi, D Yang, R Wang Frontiers in Materials 10, 1022878, 2023 | 5 | 2023 |
| Numerical analysis of the dislocation density in n-type 4H-SiC H Chen, W Hang, R Wang, J Yuan, X Pi, D Yang, X Han CrystEngComm 25 (26), 3718-3725, 2023 | 5 | 2023 |
| Numerical analysis on the origin of thickness unevenness and formation of pits at GaN thin film grown by HVPE XF Han, JH Lee, YJ Lee, JH Song, KW Yi Journal of Crystal Growth 450, 66-73, 2016 | 5 | 2016 |
| Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon XF Han, X Liu, S Nakano, K Kakimoto Journal of Crystal Growth 545, 125752, 2020 | 4 | 2020 |
| 3D numerical analysis of influence of the non-uniform deposition rate on the hillock density at HVPE-GaN surface XF Han, JH Lee, YJ Lee, JH Song, KW Yi Journal of Crystal Growth 474, 81-88, 2017 | 4 | 2017 |
| Optimization of the thermal field of 8-inch SiC crystal growth by PVT method with “3 separation heater method” B Xu, X Han, S Xu, D Yang, X Pi Journal of Crystal Growth 614, 127238, 2023 | 3 | 2023 |
| Numerical analysis of phosphorus concentration distribution in a silicon crystal during directional solidification process S Nakano, X Liu, XF Han, K Kakimoto Crystals 11 (1), 27, 2020 | 2 | 2020 |
| 3D Numerical analysis of the asymmetric three-phase line of floating zone for silicon crystal growth XF Han, X Liu, S Nakano, H Harada, Y Miyamura, K Kakimoto Crystals 10 (2), 121, 2020 | 2 | 2020 |
| Numerical analysis of phosphorus concentration distribution in a silicon crystal during directional solidification process, Crystals, 2021, vol. 11, no. 27 S Nakano, X Liu, XF Han, K Kakimoto s Note: MDPI stays neu-tral with regard to jurisdictional clai-ms in …, 2020 | 2 | 2020 |
