フォロー
Wei Jiang
Wei Jiang
Department of Electronic and Computer Engneering, The Hong Kong University of Science and Technology
確認したメール アドレス: connect.ust.hk
タイトル
引用先
引用先
Spontaneous degradation of flexible poly-Si TFTs subject to dynamic bending stress
W Jiang, M Wang, H Wang, D Zhang
IEEE Transactions on Electron Devices 66 (5), 2214-2218, 2019
192019
Mechanical reliability of flexible a-InGaZnO TFTs under dynamic stretch stress
X Wang, M Wang, W Jiang, D Zhang, H Wang, Q Shan
IEEE Transactions on Electron Devices 65 (7), 2863-2869, 2018
152018
A Kinetic Model for the Generation and Annihilation of Thermally Induced Carrier Donors in a Semiconducting Metal‐Oxide Thin Film
Y Wang, W Jiang, X Xie, Z Xia, M Wong
Small 18 (41), 2203346, 2022
122022
Origin of spontaneous degradation of flexible poly-Si TFTs after dynamic bending
W Jiang, B Li, X Li, M Wang, H Wang, D Zhang
IEEE Electron Device Letters 41 (8), 1205-1208, 2020
82020
Degradation of flexible LTPS TFTs under repetitive bending stress
W Jiang, Q Shan, H Wang, D Zhang, M Wang
2018 9th Inthernational Conference on Computer Aided Design for Thin-Film …, 2018
52018
P‐3: Conductive Indium‐Tin‐Zinc Oxide Formed Using an Oxygen Plasma Treatment Through a Silicon Oxide Cover Layer
X Xie, K Chen, Z Zhou, W Jiang, Y Wang, S Wang, Z Xia, M Wong
SID Symposium Digest of Technical Papers 54 (1), 1786-1789, 2023
22023
Reliability of Flexible LTPS TFTs under Dynamic Mechanical Stress
B Li, X Yin, W Jiang, M Wang, D Zhang, H Wang
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020
12020
Comparator with Non-Uniform Parameter Compensation using Dual-Gate Thin-Film Transistors
X Liu, R Shi, W Jiang, X Xie, M Wong
IEEE Electron Device Letters, 2024
2024
Dependence of the Electrical Behavior of an Indium-Gallium-Zinc Oxide Thin-Film Transistor on the Process Condition of Plasma-Based Fluorination
W Jiang, Z Xia, M Wong
IEEE Transactions on Electron Devices, 2023
2023
P‐1.3: Application of a Kinetic Model to the Characterization of Donor‐Defects in a Fluorinated Metal‐Oxide Semiconductor
Y Wang, W Jiang, Z Xia, M Wong
SID Symposium Digest of Technical Papers 54, 445-447, 2023
2023
P‐1.5: The effects of the temperature of fluorination treatment on the reliability of an indium‐gallium‐zinc oxide thin‐film transistor
W Jiang, Y Wang, S Wang, Z Xia, M Wong
SID Symposium Digest of Technical Papers 54, 451-453, 2023
2023
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