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| Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells K Muraki, S Fukatsu, Y Shiraki, R Ito Applied Physics Letters 61 (5), 557-559, 1992 | 605 | 1992 |
| Transverse mode stabilized AlxGa1-xAs injection lasers with channeled-substrate-planar structure K Aiki, M Nakamura, T Kuroda, J Umeda, R Ito, N Chinone, M Maeda IEEE Journal of Quantum Electronics 14 (2), 89-94, 1978 | 277 | 1978 |
| Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth S Fukatsu, K Fujita, H Yaguchi, Y Shiraki, R Ito Applied physics letters 59 (17), 2103-2105, 1991 | 257 | 1991 |
| Longitudinal-mode behaviors of mode-stabilized Al Ga As injection lasers M Nakamura, K Aiki, N Chinone, R Ito, J Umeda J. Appl. Phys 49 (9), 4644-4648, 1978 | 240 | 1978 |
| MOVPE growth of cubic GaN on GaAs using dimethylhydrazine S Miyoshi, K Onabe, N Ohkouchi, H Yaguchi, R Ito, S Fukatsu, Y Shiraki Journal of crystal growth 124 (1-4), 439-442, 1992 | 210 | 1992 |
| Biexciton lasing in the layered perovskite-type material (C6H13NH3) 2PbI4 T Kondo, T Azuma, T Yuasa, R Ito Solid state communications 105 (4), 253-255, 1998 | 164 | 1998 |
| Longitudinal mode competition and asymmetric gain saturation in semiconductor injection lasers. II. Theory N Ogasawara, R Ito Japanese journal of applied physics 27 (4R), 615, 1988 | 157 | 1988 |
| Resonant third-order optical nonlinearity in the layered perovskite-type material (C6H13NH3) 2PbI4 T Kondo, S Iwamoto, S Hayase, K Tanaka, J Ishi, M Mizuno, K Ema, R Ito Solid state communications 105 (8), 503-506, 1998 | 141 | 1998 |
| Magneto-optical study on excitonic spectra in ( T Kataoka, T Kondo, R Ito, S Sasaki, K Uchida, N Miura Physical Review B 47 (4), 2010, 1993 | 141 | 1993 |
| Second-order nonlinear susceptibilities of various dielectric and semiconductor materials I Shoji, T Kondo, R Ito Optical and Quantum Electronics 34, 797-833, 2002 | 129 | 2002 |
| Metalorganic vapor phase epitaxy of GaP1−xNx alloys on GaP S Miyoshi, H Yaguchi, K Onabe, R Ito, Y Shiraki Applied physics letters 63 (25), 3506-3508, 1993 | 127 | 1993 |
| Determination of quadratic nonlinear optical coefficient of AlxGa1−xAs system by the method of reflected second harmonics M Ohashi, T Kondo, R Ito, S Fukatsu, Y Shiraki, K Kumata, SS Kano Journal of applied physics 74 (1), 596-601, 1993 | 121 | 1993 |
| Optical bistability in a semiconductor laser amplifier T Nakai, N Ogasawara, R Ito Japanese journal of applied physics 22 (5A), L310, 1983 | 106 | 1983 |
| Two-dimensional Wannier excitons in a layered-perovskite-type crystal (C6H13NH3) 2PbI4 K Tanaka, F Sano, T Takahashi, T Kondo, R Ito, K Ema Solid state communications 122 (5), 249-252, 2002 | 105 | 2002 |
| GaAs/Ge/GaAs sublattice reversal epitaxy on GaAs (100) and (111) substrates for nonlinear optical devices SKS Koh, TKT Kondo, MEM Ebihara, TIT Ishiwada, HSH Sawada, ... Japanese journal of applied physics 38 (5A), L508, 1999 | 105 | 1999 |
| Buried-heterostructure AlGaAs lasers K Saito, R Ito IEEE Journal of Quantum Electronics 16 (2), 205-215, 1980 | 104 | 1980 |
| Photoluminescence properties of cubic GaN grown on GaAs (100) substrates by metalorganic vapor phase epitaxy J Wu, H Yaguchi, K Onabe, R Ito, Y Shiraki Applied physics letters 71 (15), 2067-2069, 1997 | 100 | 1997 |
| Realization of abrupt interfaces in Si/Ge superlattices by suppressing Ge surface segregation with submonolayer of Sb K Fujita, S Fukatsu, H Yaguchi, T Igarashi, Y Shiraki, R Ito Japanese journal of applied physics 29 (11A), L1981, 1990 | 99 | 1990 |
| Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasers N Chinone, K Aiki, M Nakamura, R Ito IEEE Journal of Quantum Electronics 14 (8), 625-631, 1978 | 95 | 1978 |
