| High-mobility BaSnO3 grown by oxide molecular beam epitaxy S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer APL Materials 4 (1), 016106, 2016 | 141 | 2016 |
| Formation of high-quality quasi-free-standing bilayer graphene on SiC (0001) by oxygen intercalation upon annealing in air MH Oliveira Jr, T Schumann, F Fromm, R Koch, M Ostler, M Ramsteiner, ... Carbon 52, 83-89, 2013 | 126 | 2013 |
| Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer T Schumann, T Gotschke, F Limbach, T Stoica, R Calarco Nanotechnology 22 (9), 095603, 2011 | 110 | 2011 |
| Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal T Schumann, L Galletti, DA Kealhofer, H Kim, M Goyal, S Stemmer Physical Review Letters 120 (1), 016801, 2018 | 84 | 2018 |
| Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays T Gotschke, T Schumann, F Limbach, T Stoica, R Calarco Applied Physics Letters 98 (10), 103102, 2011 | 77 | 2011 |
| Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy S Nakhaie, JM Wofford, T Schumann, U Jahn, M Ramsteiner, M Hanke, ... Applied Physics Letters 106 (21), 213108, 2015 | 64 | 2015 |
| Influence of the silicon carbide surface morphology on the epitaxial graphene formation MH Oliveira Jr, T Schumann, M Ramsteiner, JMJ Lopes, H Riechert Applied Physics Letters 99 (11), 111901, 2011 | 63 | 2011 |
| Mono-and few-layer nanocrystalline graphene grown on Al< sub> 2</sub> O< sub> 3</sub>(0001) by molecular beam epitaxy MH Oliveira Jr, T Schumann, R Gargallo-Caballero, F Fromm, T Seyller, ... Carbon 56, 339-350, 2013 | 58 | 2013 |
| Anisotropic quantum Hall effect in epitaxial graphene on stepped SiC surfaces T Schumann, KJ Friedland, MH Oliveira Jr, A Tahraoui, JMJ Lopes, ... Physical Review B 85 (23), 235402, 2012 | 48 | 2012 |
| Acousto-electric transport in epitaxial monolayer graphene on SiC PV Santos, T Schumann, MH Oliveira Jr, JMJ Lopes, H Riechert Applied Physics Letters 102 (22), 221907, 2013 | 42 | 2013 |
| Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2 T Schumann, M Goyal, DA Kealhofer, S Stemmer Physical Review B 95 (24), 241113, 2017 | 41 | 2017 |
| Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces MH Oliveira Jr, JMJ Lopes, T Schumann, LA Galves, M Ramsteiner, ... Nature Communications 6, 2015 | 41 | 2015 |
| Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC (0001) T Schumann, M Dubslaff, MH Oliveira Jr, M Hanke, JMJ Lopes, H Riechert Physical Review B 90 (4), 041403(R), 2014 | 40 | 2014 |
| Structure and optical band gaps of (Ba,Sr)SnO3 films grown by molecular beam epitaxy T Schumann, S Raghavan, K Ahadi, H Kim, S Stemmer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34 (5 …, 2016 | 37 | 2016 |
| Conduction band edge effective mass of La-doped BaSnO3 S James Allen, S Raghavan, T Schumann, KM Law, S Stemmer Applied Physics Letters 108 (25), 252107, 2016 | 35 | 2016 |
| Molecular beam epitaxy of Cd3As2 on a III-V substrate T Schumann, M Goyal, H Kim, S Stemmer APL Materials 4 (12), 126110, 2016 | 33 | 2016 |
| Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2 M Goyal, L Galletti, S Salmani-Rezaie, T Schumann, DA Kealhofer, ... APL Materials 6 (2), 026105, 2018 | 26 | 2018 |
| Efficient Terahertz Harmonic Generation with Coherent Acceleration of Electrons in the Dirac Semimetal B Cheng, N Kanda, TN Ikeda, T Matsuda, P Xia, T Schumann, S Stemmer, ... Physical Review Letters 124 (11), 117402, 2020 | 25 | 2020 |
| Two-dimensional Dirac fermions in thin films of L Galletti, T Schumann, OF Shoron, M Goyal, DA Kealhofer, H Kim, ... Physical Review B 97 (11), 115132, 2018 | 22 | 2018 |
| Surface states of strained thin films of the Dirac semimetal M Goyal, H Kim, T Schumann, L Galletti, AA Burkov, S Stemmer Physical Review Materials 3 (6), 064204, 2019 | 17 | 2019 |
Joao Marcelo J. LopesSenior Scientist, Paul-Drude-Institut für Festkörperelektronik確認したメール アドレス: pdi-berlin.de
