| Kinetics study and degradation analysis through raman spectroscopy of graphite as a negative-electrode material for potassium-ion batteries M Shimizu, T Koya, A Nakahigashi, N Urakami, T Yamakami, S Arai The Journal of Physical Chemistry C 124 (24), 13008-13016, 2020 | 27 | 2020 |
| Thermal chemical vapor deposition and luminescence property of graphitic carbon nitride film for carbon-based semiconductor systems N Urakami, M Kosaka, Y Hashimoto Japanese Journal of Applied Physics 58 (1), 010907, 2018 | 23 | 2018 |
| Formation of graphitic carbon nitride and boron carbon nitride film on sapphire substrate M Kosaka, N Urakami, Y Hashimoto Japanese Journal of Applied Physics 57 (2S2), 02CB09, 2018 | 15 | 2018 |
| Analysis of quantum levels for self‐assembled InGaAsN/GaP quantum dots F Fukami, K Umeno, Y Furukawa, N Urakami, S Mitsuyoshi, H Okada, ... physica status solidi c 8 (2), 322-324, 2011 | 14 | 2011 |
| Electronic transport and device application of crystalline graphitic carbon nitride film K Takashima, N Urakami, Y Hashimoto Materials Letters 281, 128600, 2020 | 12 | 2020 |
| Formation of self-assembled InGaAsN/GaP quantum dots by molecular-beam epitaxy K Umeno, Y Furukawa, N Urakami, R Noma, S Mitsuyoshi, A Wakahara, ... Physica E: Low-dimensional Systems and Nanostructures 42 (10), 2772-2776, 2010 | 12 | 2010 |
| Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials N Urakami, M Kosaka, Y Hashimoto physica status solidi (b) 257 (2), 1900375, 2020 | 10 | 2020 |
| Demonstration of electronic devices in graphitic carbon nitride crystalline film N Urakami, K Ogihara, H Futamura, K Takashima, Y Hashimoto AIP Advances 11 (7), 2021 | 8 | 2021 |
| Epitaxial growth of ReS2 (001) thin film via deposited-Re sulfurization N Urakami, T Okuda, Y Hashimoto Japanese Journal of Applied Physics 57 (2S2), 02CB07, 2017 | 8 | 2017 |
| Crystalline trigonal selenium flakes grown by vapor deposition and its photodetector application Y Suzuki, F Doi, N Urakami, Y Hashimoto Materials Letters 275, 128207, 2020 | 7 | 2020 |
| Electrical and luminescence properties of Mg‐doped p‐type GaPN grown by molecular beam epitaxy S Mitsuyoshi, K Umeno, Y Furukawa, N Urakami, A Wakahara, H Yonezu physica status solidi c 7 (10), 2498-2501, 2010 | 7 | 2010 |
| Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE K Umeno, Y Furukawa, N Urakami, S Mitsuyoshi, H Yonezu, A Wakahara Journal of crystal growth 312 (2), 231-237, 2010 | 7 | 2010 |
| Growth and luminescence characterization of dilute InPN alloys grown by molecular beam epitaxy K Umeno, Y Furukawa, N Urakami, S Mitsuyoshi, H Yonezu, A Wakahara, ... Journal of Vacuum Science & Technology B 28 (3), C3B22-C3B26, 2010 | 6 | 2010 |
| Oxidation of tantalum disulfide (TaS2) films for gate dielectric and process design of two-dimensional field-effect device H Takeuchi, N Urakami, Y Hashimoto Nanotechnology 33 (37), 375204, 2022 | 5 | 2022 |
| Solid-source vapor growth of rectangular germanium arsenide (GeAs) film Y Suzuki, N Urakami, Y Hashimoto Materials Letters 283, 128748, 2021 | 5 | 2021 |
| Molecular-beam epitaxy growth of dilute GaAsN alloys by surface nitridation N Urakami, K Yamane, H Sekiguchi, H Okada, A Wakahara Journal of Crystal Growth 435, 19-23, 2016 | 5 | 2016 |
| III–VN compounds for multi-junction solar cells on Si K Yamane, N Urakami, H Sekiguchi, A Wakahara 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2792-2796, 2014 | 5 | 2014 |
| Thermal chemical vapor deposition of layered carbon nitride films under a hydrogen gas atmosphere N Urakami, K Takashima, M Shimizu, Y Hashimoto CrystEngComm 25 (5), 877-883, 2023 | 4 | 2023 |
| Growth of dilute BGaP alloys by molecular beam epitaxy N Urakami, F Fukami, H Sekiguchi, H Okada, A Wakahara Journal of crystal growth 378, 96-99, 2013 | 4 | 2013 |
| Temperature-dependent Raman spectroscopy of Cu2Sn1− xGexS3 thin films T Okamura, MT Htay, K Yamaguchi, N Urakami, N Momose, K Ito, ... Japanese Journal of Applied Physics 57 (8S3), 08RC12, 2018 | 3 | 2018 |
Yoshio HashimotoShinshu University確認したメール アドレス: shinshu-u.ac.jp
