Boron-layer silicon photodiodes for high-efficiency low-energy electron detection A Šakić, LK Nanver, TLM Scholtes, CTH Heerkens, T Knežević, ... Solid-state electronics 65, 38-44, 2011 | 54 | 2011 |
Radiation detector LK Nanver, TLM Scholtes, CS Kooijman, GNA Van Veen US Patent 8,450,820, 2013 | 49 | 2013 |
High-efficiency silicon photodiode detector for sub-keV electron microscopy A Sakic, G van Veen, K Kooijman, P Vogelsang, TLM Scholtes, ... IEEE transactions on electron devices 59 (10), 2707-2714, 2012 | 41 | 2012 |
Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection A S̆akić, LK Nanver, G Van Veen, K Kooijman, P Vogelsang, ... 2010 International Electron Devices Meeting, 31.4. 1-31.4. 4, 2010 | 41 | 2010 |
Pure-boron chemical-vapor-deposited layers: A new material for silicon device processing LK Nanver, TLM Scholtes, F Sarubbi, WB De Boer, G Lorito, A Šakić, ... 2010 18th International Conference on Advanced Thermal Processing of …, 2010 | 28 | 2010 |
Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices LK Nanver, A Sammak, V Mohammadi, KRC Mok, L Qi, A Šakić, ... ECS Transactions 49 (1), 25, 2012 | 27 | 2012 |
Characterization of amorphous boron layers as diffusion barrier for pure aluminium A Šakic, V Jovanović, P Maleki, TLM Scholtes, S Milosavljević, LK Nanver The 33rd International Convention MIPRO, 26-29, 2010 | 19 | 2010 |
Optical stability investigation of high-performance silicon-based VUV photodiodes L Shi, LK Nanver, A Šakić, S Nihtianov, A Gottwald, U Kroth SENSORS, 2010 IEEE, 132-135, 2010 | 15 | 2010 |
Silicon photodiodes for high-efficiency low-energy electron detection A Šakić, LK Nanver, TLM Scholtes, CTH Heerkens, G Van Veen, ... 2010 Proceedings of the European Solid State Device Research Conference, 102-105, 2010 | 12 | 2010 |
Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions T Knežević, T Suligoj, A Šakić, LK Nanver 2012 Proceedings of the 35th International Convention MIPRO, 36-41, 2012 | 11 | 2012 |
Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes A Sakic, TLM Scholtes, W De Boer, N Golshani, J Derakhshandeh, ... Materials 4 (12), 2092-2107, 2011 | 10 | 2011 |
Series resistance optimization of high-sensitivity Si-based VUV photodiodes L Shi, LK Nanver, A Šakić, S Nihtianov, T Knežević, A Gottwald, U Kroth 2011 IEEE International Instrumentation and Measurement Technology …, 2011 | 10 | 2011 |
Solid-state backscattered-electron detector for sub-keV imaging in scanning electron microscopy A Sakic, LK Nanver, G Van Veen, K Kooijman, P Vogelsang, ... Proceedings ICT. Open: Micro Technology and Micro Devices SAFE 2011 …, 2011 | 8 | 2011 |
Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+ n junctions A Sakic, L Qi, TLM Scholtes, J Van Der Cingel, LK Nanver Solid-state electronics 84, 65-73, 2013 | 5 | 2013 |
Applications of PureB and PureGaB ultrashallow junction technologies LK Nanver, A Sammak, A Šakić, V Mohammadi, J Derakhshandeh, ... 2012 IEEE 11th International Conference on Solid-State and Integrated …, 2012 | 3 | 2012 |
Optimization of the perimeter doping of ultrashallow p+-n−-n+ photodiodes T Knežević, T Suligoj, A Šakic, LK Nanver 2011 Proceedings of the 34th International Convention MIPRO, 44-48, 2011 | 3 | 2011 |
New solid state detector design for ultra sensitive back scattered electron detection I Gestmann, K Kooijman, A Sakic, LK Nanver, G van Veen 17th International Microscopy Congress (IMC17), 2010 | 2 | 2010 |
Al-mediated solid-phase epitaxy of silicon-on-insulator A Sakic, Y Civale, LK Nanver, C Biasotto, V Jovanovic MRS Online Proceedings Library (OPL) 1245, 1245-A20-03, 2010 | 2 | 2010 |
PureB low-energy electron detectors with closely-packed photodiodes integrated on locally-thinned high-resistivity silicon A Sakic, S Milosavljevic, WHA Wien, JMW Laros, LK Nanver SENSORS, 2012 IEEE, 1-4, 2012 | 1 | 2012 |
Epitaxial growth of large-area p+n diodes at 400 ºC by Aluminum-Induced Crystallization A Sakic, L Qi, TLM Scholtes, J Van Der Cingel, LK Nanver 2012 Proceedings of the European Solid-State Device Research Conference …, 2012 | 1 | 2012 |