Eng Fong Chor
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Investigations of HfO2∕ AlGaN∕ GaN metal-oxide-semiconductor high electron mobility transistors
C Liu, EF Chor, LS Tan
Applied physics letters 88 (17), 2006
Pulsed laser annealing of Be-implanted GaN
HT Wang, LS Tan, EF Chor
Journal of applied physics 98 (9), 2005
Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide
C Liu, EF Chor, LS Tan
Semiconductor science and technology 22 (5), 522, 2007
End of range (EOR) secondary defect engineering using substitutional carbon doping
CF Tan, J Liu, HJ Lee, B Indajang, EF Chor, SY Ong
US Patent 7,109,099, 2006
Embedded polysilicon gate MOSFET
L Chan, CL Cha, EF Chor, G Hao, TK Lee
US Patent 6,252,277, 2001
A propagation-delay expression and its application to the optimization of polysilicon emitter ECL processes
EF Chor, A Brunnschweiler, P Ashburn
IEEE journal of solid-state circuits 23 (1), 251-259, 1988
Transparent indium zinc oxide ohmic contact to phosphor-doped n-type zinc oxide
G Hu, B Kumar, H Gong, EF Chor, P Wu
Applied physics letters 88 (10), 2006
Tuning the Schottky barrier height of nickel silicide on p-silicon by aluminum segregation
M Sinha, EF Chor, YC Yeo
Applied Physics Letters 92 (22), 2008
Properties of p-type and n-type ZnO influenced by P concentration
G Hu, H Gong, EF Chor, P Wu
Applied physics letters 89 (25), 2006
Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN
EF Chor, D Zhang, H Gong, GL Chen, TYF Liew
Journal of Applied Physics 90 (3), 1242-1249, 2001
Emitter resistance of arsenic-and phosphorus-doped polysilicon emitter transistors
EF Chor, P Ashburn, A Brunnschweiler
IEEE electron device letters 6 (10), 516-518, 1985
Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts
EF Chor, D Zhang, H Gong, WK Chong, SY Ong
Journal of Applied Physics 87 (5), 2437-2444, 2000
Improved electrical performance and thermal stability of HfO2/Al2O3 bilayer over HfO2 gate dielectric AlGaN/GaN MIS–HFETs
F Tian, EF Chor
Journal of the Electrochemical Society 157 (5), H557, 2010
Composite step-graded collector of InP/InGaAs/InP DHBT for minimised carrier blocking
EF Chor, CJ Peng
Electronics Letters 32 (15), 1409-1410, 1996
Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's
EF Chor, RJ Malik, RA Hamm, R Ryan
IEEE Electron Device Letters 17 (2), 62-64, 1996
Structural and electrical characterizations of the pulsed-laser-deposition-grown Sc2O3∕ GaN heterostructure
C Liu, EF Chor, LS Tan, Y Dong
Applied physics letters 88 (22), 2006
Mechanisms of ohmic contact formation and carrier transport of low temperature annealed Hf/Al/Ta on In0. 18Al0. 82N/GaN-on-Si
Y Liu, SP Singh, LM Kyaw, MK Bera, YJ Ngoo, HR Tan, S Tripathy, GQ Lo, ...
ECS Journal of Solid State Science and Technology 4 (2), P30, 2014
Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities
WS Lau, EF Chor, CSFCS Foo, WCKWC Khoong
Japanese journal of applied physics 31 (8A), L1021, 1992
Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage
Y Liu, SP Singh, YJ Ngoo, LM Kyaw, MK Bera, QQ Lo, EF Chor
Journal of Vacuum Science & Technology B 32 (3), 2014
Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for
EF Chor, WK Chong, CH Heng
Journal of applied physics 84 (5), 2977-2979, 1998
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