| Surface-potential-based silicon carbide power MOSFET model for circuit simulation M Shintani, Y Nakamura, K Oishi, M Hiromoto, T Hikihara, T Sato IEEE Transactions on Power Electronics 33 (12), 10774-10783, 2018 | 32 | 2018 |
| A simulation model for SiC power MOSFET based on surface potential Y Nakamura, M Shintani, K Oishi, T Sato, T Hikihara 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 | 24 | 2016 |
| A high power curve tracer for characterizing full operational range of SiC power transistors Y Nakamura, M Shintani, T Sato, T Hikihara 2016 International Conference on Microelectronic Test Structures (ICMTS), 90-94, 2016 | 19 | 2016 |
| Measurement and modeling of gate–drain capacitance of silicon carbide vertical double-diffused MOSFET M Shintani, Y Nakamura, M Hiromoto, T Hikihara, T Sato Japanese Journal of Applied Physics 56 (4S), 04CR07, 2017 | 17 | 2017 |
| Electrothermal Cosimulation for Predicting the Power Loss and Temperature of SiC MOSFET Dies Assembled in a Power Module Y Nakamura, TM Evans, N Kuroda, H Sakairi, Y Nakakohara, H Otake, ... IEEE Transactions on Power Electronics 35 (3), 2950-2958, 2019 | 12 | 2019 |
| A scalable drain current model of AlN/GaN MIS-HEMTs with embedded source field-plate structures H Aoki, H Sakairi, N Kuroda, Y Nakamura, K Chikamatsu, K Nakahara 2018 IEEE Applied Power Electronics Conference and Exposition (APEC), 2842-2847, 2018 | 5 | 2018 |
| A Small Signal AC Model Using Scalable Drain Current Equations of AlGaN/GaN MIS Enhancement HEMT H Aoki, H Sakairi, N Kuroda, Y Nakamura, K Chikamatsu, K Nakahara 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 80-83, 2018 | 3 | 2018 |
| Analysis of transient behavior of SiC power MOSFETs based on surface potential model and its application to boost converter T Okuda, Y Nakamura, T Hikihara, M Shintani, T Sato 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 3 | 2016 |
| AlGaN/GaN MIS HEMT modeling of frequency dispersion and self-heating effects H Aoki, H Sakairi, N Kuroda, Y Nakamura, K Chikamatsu, K Nakahara 2018 IEEE International Symposium on Radio-Frequency Integration Technology …, 2018 | 1 | 2018 |
| Electro-Thermal Simulation for Predicting the Temperature of SiC Dies in the Power Module of a High Frequency Operating Power Converter Y Nakamura, TM Evans, H Otake, Y Nakakohara, H Sakairi, N Kuroda, ... PCIM Europe 2018; International Exhibition and Conference for Power …, 2018 | 1 | 2018 |
