Michio Kadota
Michio Kadota
Tohoku University
確認したメール アドレス: wd6.so-net.ne.jp
タイトル引用先
Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device
Y Ito, M Kadota
US Patent 7,501,293, 2009
33782009
Development of substrate structures and processes for practical applications of various surface acoustic wave devices
M Kadota
Japanese journal of applied physics 44 (6S), 4285, 2005
1012005
Surface acoustic wave device
K Nishiyama, E Takata, T Nakao, M Kadota
US Patent 7,327,071, 2008
812008
Small surface acoustic wave duplexer for wide-band code-division multiple access full-band system having good temperature characteristics
M Kadota, T Nakao, K Nishiyama, S Kido, M Kato, R Omote, H Yonekura, ...
Japanese Journal of Applied Physics 46 (7S), 4714, 2007
792007
Opto-electronic integrated circuit
Y Nanishi, M Kadota
US Patent 6,458,614, 2002
682002
Surface acoustic wave characteristics of a ZnO/quartz substrate structure having a large electromechanical coupling factor and a small temperature coefficient
M Kadota
Japanese journal of applied physics 36 (5S), 3076, 1997
661997
Sensor for detecting substance in liquid
K Okaguchi, T Hada, M Kadota
US Patent 8,658,097, 2014
652014
Smaller surface acoustic wave duplexer for US personal communication service having good temperature characteristics
T Nakao, M Kadota, K Nishiyama, Y Nakai, D Yamamoto, Y Ishiura, ...
Japanese Journal of Applied Physics 46 (7S), 4760, 2007
592007
6b-4 rf filter using boundary acoustic wave
H Kando, D Yamamoto, M Mimura, T Oda, A Shimizu, K Shimoda, ...
2006 IEEE Ultrasonics Symposium, 188-191, 2006
582006
Method for forming a GaN-based semiconductor light emitting device
Y Nanishi, M Kadota
US Patent 6,146,916, 2000
582000
Surface acoustic wave duplexer for US personal communication services with good temperature characteristics
M Kadota, T Nakao, N Taniguchi, E Takata, M Mimura, K Nishiyama, ...
Japanese journal of applied physics 44 (6S), 4527, 2005
572005
High-frequency lamb wave device composed of MEMS structure using LiNbO3thin film and air gap
M Kadota, T Ogami, K Yamamoto, H Tochishita, Y Negoro
IEEE transactions on ultrasonics, ferroelectrics, and frequency control 57 …, 2010
552010
Surface acoustic wave filter with angled reflection by piezoelectric substrate reflection edges, duplexer, and communication device
M Kadota
US Patent 6,587,016, 2003
532003
5.4 GHz Lamb wave resonator on LiNbO3 thin crystal plate and its application
M Kadota, T Ogami
Japanese Journal of Applied Physics 50 (7S), 07HD11, 2011
512011
Tunable filter
M Kadota, H Kobayashi, T Ogami
US Patent 8,552,818, 2013
492013
Crystal growth and electromechanical properties of Al substituted langasite (La3Ga5− xAlxSiO14)
M Kumatoriya, H Sato, J Nakanishi, T Fujii, M Kadota, Y Sakabe
Journal of crystal growth 229 (1-4), 289-293, 2001
442001
Piezoelectric and optical properties of ZnO films deposited by an electron–cyclotron-resonance sputtering system
M Kadota, T Miura, M Minakata
Journal of Crystal Growth 237, 523-527, 2002
432002
Semiconductor optical device and optoelectronic integrated circuit device including a ZnO buffer layer
M Kadota, S Arai
US Patent 6,355,945, 2002
412002
Properties of leaky, leaky pseudo, and Rayleigh surface acoustic waves on various rotated Y-cut langasite crystal substrates
M Kadota, J Nakanishi, T Kitamura, M Kumatoriya
Japanese journal of applied physics 38 (5S), 3288, 1999
411999
Characteristics of zinc oxide films on glass substrates deposited by RF-mode electron cyclotron resonance sputtering system
M Kadota, T Kasanami, M Minakata
Japanese journal of applied physics 32 (5S), 2341, 1993
411993
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論文 1–20