| High-density through silicon vias for 3-D LSIs M Koyanagi, T Fukushima, T Tanaka Proceedings of the IEEE 97 (1), 49-59, 2009 | 370 | 2009 |
| Three-dimensional integration technology based on wafer bonding with vertical buried interconnections M Koyanagi, T Nakamura, Y Yamada, H Kikuchi, T Fukushima, T Tanaka, ... IEEE Transactions on Electron Devices 53 (11), 2799-2808, 2006 | 283 | 2006 |
| Three-dimensional integration technology and integrated systems M Koyanagi, T Fukushima, T Tanaka 2009 Asia and South Pacific Design Automation Conference, 409-415, 2009 | 257 | 2009 |
| New three-dimensional integration technology using self-assembly technique T Fukushima, Y Yamada, H Kikuchi, M Koyanagi IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 163 | 2005 |
| Three-dimensional hybrid integration technology of CMOS, MEMS, and photonics circuits for optoelectronic heterogeneous integrated systems KW Lee, A Noriki, K Kiyoyama, T Fukushima, T Tanaka, M Koyanagi IEEE Transactions on Electron Devices 58 (3), 748-757, 2010 | 127 | 2010 |
| New three-dimensional integration technology based on reconfigured wafer-on-wafer bonding technique T Fukushima, H Kikuchi, Y Yamada, T Konno, J Liang, K Sasaki, ... 2007 IEEE International Electron Devices Meeting, 985-988, 2007 | 121 | 2007 |
| Wafer thinning, bonding, and interconnects induced local strain/stress in 3D-LSIs with fine-pitch high-density microbumps and through-Si vias M Murugesan, H Kino, H Nohira, JC Bea, A Horibe, F Yamada, ... 2010 International Electron Devices Meeting, 2.3. 1-2.3. 4, 2010 | 117 | 2010 |
| Heterogeneous integration at fine pitch (≤ 10 µm) using thermal compression bonding AA Bajwa, SC Jangam, S Pal, N Marathe, T Bai, T Fukushima, M Goorsky, ... 2017 IEEE 67th electronic components and technology conference (ECTC), 1276-1284, 2017 | 100 | 2017 |
| Surface tension-driven chip self-assembly with load-free hydrogen fluoride-assisted direct bonding at room temperature for three-dimensional integrated circuits T Fukushima, E Iwata, T Konno, JC Bea, KW Lee, T Tanaka, M Koyanagi Applied Physics Letters 96 (15), 2010 | 99 | 2010 |
| Tungsten through-silicon via technology for three-dimensional LSIs H Kikuchi, Y Yamada, AM Ali, J Liang, T Fukushima, T Tanaka, ... Japanese Journal of Applied Physics 47 (4S), 2801, 2008 | 86 | 2008 |
| New three-dimensional integration technology using chip-to-wafer bonding to achieve ultimate super-chip integration T Fukushima, Y Yamada, H Kikuchi, M Koyanagi Japanese Journal of Applied Physics 45 (4S), 3030, 2006 | 82 | 2006 |
| Photosensitive fluorinated polyimides with a low dielectric constant based on reaction development patterning T Miyagawa, T Fukushima, T Oyama, T Iijima, M Tomoi Journal of Polymer Science Part A: Polymer Chemistry 41 (6), 861-871, 2003 | 70 | 2003 |
| Three-dimensional integration technology based on reconfigured wafer-to-wafer and multichip-to-wafer stacking using self-assembly method T Fukushima, E Iwata, Y Ohara, A Noriki, K Inamura, KW Lee, J Bea, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 67 | 2009 |
| New concept of positive photosensitive polyimide: reaction development patterning (RDP) T Fukushima, T Oyama, T Iijima, M Tomoi, H Itatani Journal of Polymer Science Part A: Polymer Chemistry 39 (19), 3451-3463, 2001 | 67 | 2001 |
| Multichip self-assembly technology for advanced die-to-wafer 3-D integration to precisely align known good dies in batch processing T Fukushima, E Iwata, Y Ohara, M Murugesan, J Bea, K Lee, T Tanaka, ... IEEE transactions on components, packaging and manufacturing technology 1 …, 2011 | 62 | 2011 |
| New heterogeneous multi-chip module integration technology using self-assembly method T Fukushima, T Konno, K Kiyoyama, M Murugesan, K Sato, WC Jeong, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 59 | 2008 |
| Multichip-to-wafer three-dimensional integration technology using chip self-assembly with excimer lamp irradiation T Fukushima, E Iwata, Y Ohara, M Murugesan, J Bea, K Lee, T Tanaka, ... IEEE transactions on electron devices 59 (11), 2956-2963, 2012 | 55 | 2012 |
| Evaluation of Cu diffusion from Cu through-silicon via (TSV) in three-dimensional LSI by transient capacitance measurement J Bea, K Lee, T Fukushima, T Tanaka, M Koyanagi IEEE Electron Device Letters 32 (7), 940-942, 2011 | 55 | 2011 |
| 10 µm fine pitch Cu/Sn micro-bumps for 3-D super-chip stack Y Ohara, A Noriki, K Sakuma, KW Lee, M Murugesan, J Bea, F Yamada, ... 2009 IEEE International Conference on 3D System Integration, 1-6, 2009 | 54 | 2009 |
| Reconfigured-wafer-to-wafer 3-D integration using parallel self-assembly of chips with Cu–SnAg microbumps and a nonconductive film T Fukushima, J Bea, H Kino, C Nagai, M Murugesan, H Hashiguchi, ... IEEE Transactions on Electron Devices 61 (2), 533-539, 2014 | 53 | 2014 |
