Koichiro Saiki
Koichiro Saiki
Verified email at k.u-tokyo.ac.jp - Homepage
Cited by
Cited by
Growth of graphene on Cu by plasma enhanced chemical vapor deposition
T Terasawa, K Saiki
Carbon 50 (3), 869-874, 2012
Studies on an (NH4) 2Sx-treated GaAs surface using AES, LEELS and RHEED
H Oigawa, JF Fan, Y Nannichi, K Ando, K Saiki, A Koma
Japanese Journal of Applied Physics 28 (3A), L340, 1989
Preparation and characterization of vanadyl-phthalocyanine ultrathin films grown on KBr and KCl by molecular beam epitaxy
H Tada, K Saiki, A Koma
Japanese journal of applied physics 30 (2B), L306, 1991
Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur‐terminated GaAs {111} surfaces
K Ueno, T Shimada, K Saiki, A Koma
Applied physics letters 56 (4), 327-329, 1990
Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica
K Ueno, K Saiki, T Shimada, A Koma
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (1 …, 1990
Accumulation and depletion layer thicknesses in organic field effect transistors
M Kiguchi, M Nakayama, K Fujiwara, K Ueno, T Shimada, K Saiki
Japanese Journal of Applied Physics 42 (12A), L1408, 2003
Synthesis of nitrogen-doped graphene on Pt (111) by chemical vapor deposition
G Imamura, K Saiki
The Journal of Physical Chemistry C 115 (20), 10000-10005, 2011
Van der Waals epitaxial growth of C60 film on a cleaved face of MoS2
M Sakurai, H Tada, K Saiki, A Koma
Japanese journal of applied physics 30 (11A), L1892, 1991
Effect of annealing on the mobility and morphology of thermally activated pentacene thin film transistors
D Guo, S Ikeda, K Saiki, H Miyazoe, K Terashima
Journal of applied physics 99 (9), 094502, 2006
Electric-field-induced charge injection or exhaustion in organic thin film transistor
M Kiguchi, M Nakayama, T Shimada, K Saiki
Physical Review B 71 (3), 035332, 2005
Surface-Mediated Visible-Light Photo-oxidation on Pure TiO2(001)
H Ariga, T Taniike, H Morikawa, M Tada, BK Min, K Watanabe, ...
Journal of the American Chemical Society 131 (41), 14670-14672, 2009
Application of Van der Waals epitaxy to highly heterogeneous systems
K Saiki, K Ueno, T Shimada, A Koma
Journal of Crystal Growth 95 (1-4), 603-606, 1989
In-situ observation of defect formation in CaF2 (111) surfaces induced by low energy electron bombardment
K Saiki, Y Sato, K Ando, A Koma
Surface science 192 (1), 1-10, 1987
Atomic and electronic structure of an unreconstructed polar MgO (111) thin film on Ag (111)
M Kiguchi, S Entani, K Saiki, T Goto, A Koma
Physical Review B 68 (11), 115402, 2003
Heteroepitaxy of a two-dimensional material on a three-dimensional material
A Koma, K Saiki, Y Sato
Applied surface science 41, 451-456, 1990
Growth of nanographite on Pt (111) and its edge state
S Entani, S Ikeda, M Kiguchi, K Saiki, G Yoshikawa, I Nakai, H Kondoh, ...
Applied physics letters 88 (15), 153126, 2006
Heteroepitaxial growth by Van der Waals interaction in one-, two-and three-dimensional materials
A Koma, K Ueno, K Saiki
Journal of crystal growth 111 (1-4), 1029-1032, 1991
Heteroepitaxy of layered semiconductor GaSe on a GaAs (111) B surface
K Ueno, H Abe, K Saiki, A Koma
Japanese journal of applied physics 30 (8A), L1352, 1991
Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance
D Guo, T Miyadera, S Ikeda, T Shimada, K Saiki
Journal of Applied Physics 102 (2), 023706, 2007
Effect of UV/ozone treatment of the dielectric layer on the device performance of pentacene thin film transistors
D Guo, S Entani, S Ikeda, K Saiki
Chemical physics letters 429 (1-3), 124-128, 2006
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