| High performance amorphous oxide thin film transistors with self-aligned top-gate structure JC Park, SW Kim, SI Kim, H Yin, JH Hur, SH Jeon, SH Park, IH Song, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 622 | 2009 |
| Extraction of subgap density of states in amorphous InGaZnO thin-film transistors by using multifrequency capacitance–voltage characteristics S Lee, S Park, S Kim, Y Jeon, K Jeon, JH Park, J Park, I Song, CJ Kim, ... IEEE electron device letters 31 (3), 231-233, 2010 | 182 | 2010 |
| Highly stable transparent amorphous oxide semiconductor thin‐film transistors having double‐stacked active layers JC Park, S Kim, S Kim, C Kim, I Song, Y Park, UI Jung, DH Kim, JS Lee Advanced Materials 22 (48), 5512-5516, 2010 | 163 | 2010 |
| Transparent, flexible strain sensor based on a solution-processed carbon nanotube network J Lee, M Lim, J Yoon, MS Kim, B Choi, DM Kim, DH Kim, I Park, SJ Choi ACS applied materials & interfaces 9 (31), 26279-26285, 2017 | 155 | 2017 |
| Traps in AlGaN∕ GaN∕ SiC heterostructures studied by deep level transient spectroscopy ZQ Fang, DC Look, DH Kim, I Adesida Applied Physics Letters 87 (18), 2005 | 135 | 2005 |
| Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor SY Lee, DH Kim, E Chong, YW Jeon, DH Kim Applied Physics Letters 98 (12), 2011 | 133 | 2011 |
| Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor HY Jung, Y Kang, AY Hwang, CK Lee, S Han, DH Kim, JU Bae, WS Shin, ... Scientific reports 4 (1), 3765, 2014 | 130 | 2014 |
| Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics K Jeon, C Kim, I Song, J Park, S Kim, S Kim, Y Park, JH Park, S Lee, ... Applied Physics Letters 93 (18), 2008 | 125 | 2008 |
| Instability of amorphous oxide semiconductors via carrier‐mediated structural transition between disorder and peroxide state HH Nahm, YS Kim, DH Kim physica status solidi (b) 249 (6), 1277-1281, 2012 | 124 | 2012 |
| Study on the photoresponse of amorphous In–Ga–Zn–O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation JT Jang, J Park, BD Ahn, DM Kim, SJ Choi, HS Kim, DH Kim ACS applied materials & interfaces 7 (28), 15570-15577, 2015 | 93 | 2015 |
| Synaptic plasticity selectively activated by polarization-dependent energy-efficient ion migration in an ultrathin ferroelectric tunnel junction C Yoon, JH Lee, S Lee, JH Jeon, JT Jang, DH Kim, YH Kim, BH Park Nano Letters 17 (3), 1949-1955, 2017 | 88 | 2017 |
| Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface JI Kim, K Hwan Ji, H Yoon Jung, S Yeob Park, R Choi, M Jang, H Yang, ... Applied Physics Letters 99 (12), 2011 | 85 | 2011 |
| ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors L Lee, J Hwang, JW Jung, J Kim, HI Lee, S Heo, M Yoon, S Choi, ... Nature communications 10 (1), 1998, 2019 | 82 | 2019 |
| Subgap density-of-states-based amorphous oxide thin film transistor simulator (DeAOTS) YW Jeon, S Kim, S Lee, DM Kim, DH Kim, J Park, CJ Kim, I Song, Y Park, ... IEEE Transactions on Electron Devices 57 (11), 2988-3000, 2010 | 82 | 2010 |
| Simulation study on discrete charge effects of SiNW biosensors according to bound target position using a 3D TCAD simulator IY Chung, H Jang, J Lee, H Moon, SM Seo, DH Kim Nanotechnology 23 (6), 065202, 2012 | 79 | 2012 |
| Amorphous InGaZnO thin-film transistors—Part I: Complete extraction of density of states over the full subband-gap energy range Y Kim, M Bae, W Kim, D Kong, HK Jung, H Kim, S Kim, DM Kim, DH Kim IEEE transactions on electron devices 59 (10), 2689-2698, 2012 | 75 | 2012 |
| Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic DH Kim, SK Sung, KR Kim, JD Lee, BG Park, BH Choi, SW Hwang, D Ahn IEEE Transactions on Electron Devices 49 (4), 627-635, 2002 | 75 | 2002 |
| Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors JY Noh, H Kim, HH Nahm, YS Kim, D Hwan Kim, BD Ahn, JH Lim, ... Journal of Applied Physics 113 (18), 2013 | 74 | 2013 |
| Density of states-based design of metal oxide thin-film transistors for high mobility and superior photostability HS Kim, JS Park, HK Jeong, KS Son, TS Kim, JB Seon, E Lee, JG Chung, ... ACS applied materials & interfaces 4 (10), 5416-5421, 2012 | 74 | 2012 |
| Impact of oxygen flow rate on the instability under positive bias stresses in DC-sputtered amorphous InGaZnO thin-film transistors S Kim, YW Jeon, Y Kim, D Kong, HK Jung, MK Bae, JH Lee, B Du Ahn, ... IEEE Electron Device Letters 33 (1), 62-64, 2011 | 74 | 2011 |
