FIORI Alexandre Jean-Yves
FIORI Alexandre Jean-Yves
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
確認したメール アドレス: nims.go.jp - ホームページ
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引用先
引用先
Zr/oxidized diamond interface for high power Schottky diodes
A Traore, P Muret, A Fiori, D Eon, E Gheeraert, J Pernot
Applied Physics Letters 104 (5), 052105-052105-4, 2014
1042014
Hole transport in boron delta-doped diamond structures
G Chicot, TN Tran Thi, A Fiori, F Jomard, E Gheeraert, E Bustarret, ...
Applied Physics Letters 101 (16), 162101, 2012
432012
Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures
G Chicot, A Fiori, PN Volpe, TN Tran Thi, JC Gerbedoen, J Bousquet, ...
Journal of Applied Physics 116 (8), 083702, 2014
312014
In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures
A Fiori, TNT Thi, G Chicot, F Jomard, F Omnès, E Gheeraert, E Bustarret
Diamond and related materials 24, 175-178, 2012
272012
Simulations of carrier confinement in boron δ‐doped diamond devices
A Fiori, J Pernot, E Gheeraert, E Bustarret
physica status solidi (a) 207 (9), 2084-2087, 2010
272010
Improved depth resolution of secondary ion mass spectrometry profiles in diamond: A quantitative analysis of the delta-doping
A Fiori, F Jomard, T Teraji, G Chicot, E Bustarret
Thin Solid Films 557, 222-226, 2014
252014
Critical boron-doping levels for generation of dislocations in synthetic diamond
MP Alegre, D Araujo, A Fiori, JC Pinero, F Lloret, MP Villar, P Achatz, ...
Applied Physics Letters 105 (17), 173103, 2014
242014
Diamond Schottky diodes with ideality factors close to 1
A Fiori, T Teraji, Y Koide
Applied Physics Letters 105 (13), 133515, 2014
192014
Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers
D Araújo, MP Alegre, JC Pinero, A Fiori, E Bustarret, F Jomard
Applied Physics Letters 103 (4), 042104, 2013
182013
Atomic composition of WC/and Zr/O-terminated diamond Schottky interfaces close to ideality
JC Pinero, D Araújo, A Fiori, A Traoré, MP Villar, D Eon, P Muret, J Pernot, ...
Applied Surface Science 395, 200-207, 2017
142017
Thermal stabilization and deterioration of the WC/p‐type diamond (100) Schottky‐barrier interface
A Fiori, T Teraji, Y Koide
physica status solidi (a) 211 (10), 2363-2366, 2014
142014
Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices
F Lloret, A Fiori, D Araujo, D Eon, MP Villar, E Bustarret
Applied Physics Letters 108 (18), 181901, 2016
132016
Mechanism of reverse current increase of vertical-type diamond Schottky diodes
T Teraji, A Fiori, N Kiritani, S Tanimoto, E Gheeraert, Y Koide
Journal of Applied Physics 122 (13), 135304, 2017
122017
Boron-doped superlattices and Bragg mirrors in diamond
A Fiori, J Bousquet, D Eon, F Omnès, E Bellet-Amalric, E Bustarret
Applied Physics Letters 105 (8), 081109, 2014
112014
Plasma etching phenomena in heavily boron-doped diamond growth
A Fiori, T Teraji
Diamond and Related Materials 76, 38-43, 2017
62017
Nouvelles générations de structures en diamant dopé au bore par technique de delta-dopage pour l'électronique de puissance: croissance par CVD et caractérisation
A Fiori
Grenoble, 2012
62012
Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
F Lloret, D Eon, E Bustarret, A Fiori, D Araujo
Nanomaterials 8 (7), 480, 2018
52018
Synchronized B and 13C diamond delta structures for an ultimate in-depth chemical characterization
A Fiori, F Jomard, T Teraji, S Koizumi, J Isoya, E Gheeraert, E Bustarret
Applied Physics Express 6 (4), 045801, 2013
52013
New generations of boron-doped diamond structures by delta-doping technique for power electronics: CVD growth and characterization
A Fiori
Université de Grenoble, 2012
52012
Recent progress of diamond device toward power application
J Pernot, G Chicot, A Fiori, A Traoré, TNT Thi, PN Volpe, D Eon, F Omnès, ...
EXMATEC 2012: 11th Expert Evaluation and Control of Compound Semicon-ductor …, 2012
22012
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