| Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition M Kawaguchi, T Miyamoto, E Gouardes, D Schlenker, T Kondo, F Koyama, ... Japanese Journal of Applied Physics 40 (7B), L744, 2001 | 118 | 2001 |
| Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga Japanese journal of applied physics 38 (3B), L298, 1999 | 118 | 1999 |
| Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers D Schlenker, T Miyamoto, Z Chen, F Koyama, K Iga Journal of crystal growth 209 (1), 27-36, 2000 | 114 | 2000 |
| Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns T Baba, K Inoshita, H Tanaka, J Yonekura, M Ariga, A Matsutani, ... Journal of lightwave technology 17 (11), 2113, 1999 | 114* | 1999 |
| 1.2 µm highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink F Koyama, D Schlenker, T Miyamoto, Z Chen, A Matsutani, T Sakaguchi, ... Electronics Letters 35 (13), 1079-1081, 1999 | 95 | 1999 |
| Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine Z Pan, T Miyamoto, D Schlenker, S Sato, F Koyama, K Iga Journal of applied physics 84 (11), 6409-6411, 1998 | 89 | 1998 |
| A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers T Miyamoto, K Takeuchi, F Koyama, K Iga IEEE Photonics Technology Letters 9 (11), 1448-1450, 1997 | 85 | 1997 |
| Continuous wave operation of 1.26 [mu] m GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition S Sato, N Nishiyama, T Miyamoto, T Takahashi, N Jikutani, M Arai, ... Electronics Letters 36 (24), 1, 2000 | 78 | 2000 |
| 1.17-μm highly strained GaInAs-GaAs quantum-well laser D Schlenker, T Miyamoto, Z Chen, F Koyama, K Iga IEEE Photonics Technology Letters 11 (8), 946-948, 1999 | 72 | 1999 |
| Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311) B substrate for stable polarization operation N Niskiyama, M Arai, S Shinada, M Azuchi, T Miyamoto, F Koyama, K Iga IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 242-248, 2001 | 69 | 2001 |
| 40 Å continuous tuning of a GaInAsP/InP vertical-cavity surface-emitting laser using an external mirror N Yokouchi, T Miyamoto, T Uchida, Y Inaba, F Koyama, K Iga IEEE photonics technology letters 4 (7), 701-703, 1992 | 69 | 1992 |
| GaInNAs/GaAs quantum dots grown by chemical beam epitaxy S Makino, T Miyamoto, T Kageyama, N Nishiyama, F Koyama, K Iga Journal of crystal growth 221 (1-4), 561-565, 2000 | 65 | 2000 |
| High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy T Kageyama, T Miyamoto, S Makino, N Nishiyama, F Koyama, K Iga IEEE Photonics Technology Letters 12 (1), 10-12, 2000 | 65 | 2000 |
| Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property T Miyamoto, K Takeuchi, T Kageyama, F Koyama, K Iga Journal of crystal growth 197 (1-2), 67-72, 1999 | 62 | 1999 |
| CBE and MOCVD growth of GaInNAs T Miyamoto, T Kageyama, S Makino, D Schlenker, F Koyama, K Iga Journal of crystal growth 209 (2-3), 339-344, 2000 | 61 | 2000 |
| Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga Journal of crystal growth 209 (2-3), 350-354, 2000 | 60 | 2000 |
| Miscibility gap calculation for Ga1-xInxNyAs1-y including strain effects D Schlenker, T Miyamoto, Z Pan, F Koyama, K Iga Compound Semiconductors 1998, 559-564, 2021 | 58 | 2021 |
| Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy T Kageyama, T Miyamoto, M Ohta, T Matsuura, Y Matsui, T Furuhata, ... Journal of applied physics 96 (1), 44-48, 2004 | 51 | 2004 |
| Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition M Kawaguchi, E Gouardes, D Schlenker, T Kondo, T Miyamoto, F Koyama, ... Electronics Letters 36 (21), 1776-1777, 2000 | 50 | 2000 |
| Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine Z Pan, T Miyamoto, DS Koyama, K Iga Japanese journal of applied physics 38 (2S), 1012, 1999 | 48 | 1999 |
