Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ... Journal of Applied Physics 81 (9), 6031-6050, 1997 | 903 | 1997 |
Energetics of self-interstitial clusters in Si NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, ... Physical Review Letters 82 (22), 4460, 1999 | 414 | 1999 |
B diffusion and clustering in ion implanted Si: The role of B cluster precursors L Pelaz, M Jaraiz, GH Gilmer, HJ Gossmann, CS Rafferty, DJ Eaglesham, ... Applied physics letters 70 (17), 2285-2287, 1997 | 279 | 1997 |
Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena M Jaraiz, GH Gilmer, JM Poate, TD De La Rubia Applied physics letters 68 (3), 409-411, 1996 | 234 | 1996 |
B cluster formation and dissolution in Si: A scenario based on atomistic modeling L Pelaz, GH Gilmer, HJ Gossmann, CS Rafferty, M Jaraiz, J Barbolla Applied physics letters 74 (24), 3657-3659, 1999 | 216 | 1999 |
Carbon in silicon: Modeling of diffusion and clustering mechanisms R Pinacho, P Castrillo, M Jaraiz, I Martin-Bragado, J Barbolla, ... Journal of Applied Physics 92 (3), 1582-1587, 2002 | 215 | 2002 |
Simulation of cluster evaporation and transient enhanced diffusion in silicon CS Rafferty, GH Gilmer, M Jaraiz, D Eaglesham, HJ Gossmann Applied physics letters 68 (17), 2395-2397, 1996 | 202 | 1996 |
Diffusion and interactions of point defects in silicon: Molecular dynamics simulations GH Gilmer, TD De La Rubia, DM Stock, M Jaraiz Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 192 | 1995 |
Atomistic modeling of point and extended defects in crystalline materials M Jaraiz, L Pelaz, E Rubio, J Barbolla, GH Gilmer, DJ Eaglesham, ... MRS Online Proceedings Library (OPL) 532, 43, 1998 | 95 | 1998 |
Activation and deactivation of implanted B in Si L Pelaz, VC Venezia, HJ Gossmann, GH Gilmer, AT Fiory, CS Rafferty, ... Applied physics letters 75 (5), 662-664, 1999 | 82 | 1999 |
Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+ 1” model L Pelaz, GH Gilmer, M Jaraiz, SB Herner, HJ Gossmann, DJ Eaglesham, ... Applied physics letters 73 (10), 1421-1423, 1998 | 75 | 1998 |
Improved binary collision approximation ion implant simulators JM Hernández-Mangas, J Arias, L Bailón, M Jaraız, J Barbolla Journal of applied physics 91 (2), 658-667, 2002 | 68 | 2002 |
Kinetic Monte Carlo simulation for semiconductor processing: A review I Martin-Bragado, R Borges, JP Balbuena, M Jaraiz Progress in Materials Science 92, 1-32, 2018 | 61 | 2018 |
Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion L Pelaz, GH Gilmer, VC Venezia, HJ Gossmann, M Jaraiz, J Barbolla Applied physics letters 74 (14), 2017-2019, 1999 | 56 | 1999 |
Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach R Pinacho, M Jaraiz, P Castrillo, I Martin-Bragado, JE Rubio, J Barbolla Applied Physics Letters 86 (25), 2005 | 45 | 2005 |
Simulations of thin film deposition from atomic and cluster beams GH Gilmer, C Roland, D Stock, M Jaraiz, TD de la Rubia Materials Science and Engineering: B 37 (1-3), 1-7, 1996 | 43 | 1996 |
Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon I Martin-Bragado, P Castrillo, M Jaraiz, R Pinacho, JE Rubio, J Barbolla Physical Review B—Condensed Matter and Materials Physics 72 (3), 035202, 2005 | 40 | 2005 |
Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation P Castrillo, R Pinacho, M Jaraiz, JE Rubio Journal of Applied Physics 109 (10), 2011 | 38 | 2011 |
Simulation of defects and diffusion phenomena in silicon ME Law, GH Gilmer, M Jaraíz MRS bulletin 25 (6), 45-50, 2000 | 37 | 2000 |
Comprehensive model of damage accumulation in silicon KRC Mok, F Benistant, M Jaraiz, JE Rubio, P Castrillo, R Pinacho, ... Journal of Applied Physics 103 (1), 2008 | 36 | 2008 |