| Insulated gate and surface passivation structures for GaN-based power transistors Z Yatabe, JT Asubar, T Hashizume Journal of Physics D: Applied Physics 49 (39), 393001, 2016 | 224 | 2016 |
| AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation M Kuzuhara, JT Asubar, H Tokuda Japanese Journal of Applied Physics 55 (7), 070101, 2016 | 130 | 2016 |
| Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates S Kaneki, J Ohira, S Toiya, Z Yatabe, JT Asubar, T Hashizume Applied physics letters 109 (16), 2016 | 93 | 2016 |
| Current stability in multi-mesa-channel AlGaN/GaN HEMTs K Ohi, JT Asubar, K Nishiguchi, T Hashizume IEEE transactions on electron devices 60 (10), 2997-3004, 2013 | 91 | 2013 |
| Characterization of electronic states at insulator/(Al) GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors Z Yatabe, Y Hori, WC Ma, JT Asubar, M Akazawa, T Sato, T Hashizume Japanese Journal of Applied Physics 53 (10), 100213, 2014 | 87 | 2014 |
| Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation JT Asubar, Z Yatabe, D Gregusova, T Hashizume Journal of Applied Physics 129 (12), 2021 | 72 | 2021 |
| MBE growth of Mn-doped ZnSnAs2 thin films JT Asubar, Y Jinbo, N Uchitomi Journal of crystal growth 311 (3), 929-932, 2009 | 60 | 2009 |
| Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier JT Asubar, S Kawabata, H Tokuda, A Yamamoto, M Kuzuhara IEEE Electron Device Letters 41 (5), 693-696, 2020 | 52 | 2020 |
| Large as sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography K Hayashi, N Uchitomi, K Yamagami, A Suzuki, H Yoshizawa, JT Asubar, ... Journal of Applied Physics 119 (12), 2016 | 46 | 2016 |
| Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors JT Asubar, Z Yatabe, T Hashizume Applied Physics Letters 105 (5), 2014 | 36 | 2014 |
| Current collapse reduction in AlGaN/GaN HEMTs by high-pressure water vapor annealing JT Asubar, Y Kobayashi, K Yoshitsugu, Z Yatabe, H Tokuda, M Horita, ... IEEE Transactions on Electron Devices 62 (8), 2423-2428, 2015 | 33 | 2015 |
| MBE growth of Mn-doped Zn–Sn–As compounds on (0 0 1) InP substrates JT Asubar, A Kato, T Kambayashi, S Nakamura, Y Jinbo, N Uchitomi Journal of crystal growth 301, 656-661, 2007 | 26 | 2007 |
| AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5× 1010 achieved by ozone pretreatment and using ozone oxidant … H Tokuda, JT Asubar, M Kuzuhara Japanese Journal of Applied Physics 55 (12), 120305, 2016 | 23 | 2016 |
| Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors JT Asubar, Y Sakaida, S Yoshida, Z Yatabe, H Tokuda, T Hashizume, ... Applied Physics Express 8 (11), 111001, 2015 | 23 | 2015 |
| Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces Z Yatabe, JT Asubar, T Sato, T Hashizume physica status solidi (a) 212 (5), 1075-1080, 2015 | 22 | 2015 |
| Electrotransport properties of p-ZnSnAs2 thin films grown by molecular beam epitaxy on semi-insulating (001) InP substrates JT Asubar, A Kato, Y Jinbo, N Uchitomi Japanese journal of applied physics 47 (1S), 657, 2008 | 22 | 2008 |
| Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures JT Asubar, S Yoshida, H Tokuda, M Kuzuhara Japanese Journal of Applied Physics 55 (4S), 04EG07, 2016 | 21 | 2016 |
| Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current H Oomae, JT Asubar, S Nakamura, Y Jinbo, N Uchitomi Journal of crystal growth 338 (1), 129-133, 2012 | 20 | 2012 |
| Three dimensional local structure analysis of ZnSnAs2: Mn by X-ray fluorescence holography K Hayashi, N Uchitomi, JT Asubar, N Happo, W Hu, S Hosokawa, ... Japanese journal of applied physics 50 (1S2), 01BF05, 2011 | 17 | 2011 |
| Impurity band conduction and negative magnetoresistance in p‐ZnSnAs2 thin films JT Asubar, Y Jinbo, N Uchitomi physica status solidi c 6 (5), 1158-1161, 2009 | 17 | 2009 |
Zenji YatabeKumamoto University確認したメール アドレス: cs.kumamoto-u.ac.jp
