| Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes H Hirayama Journal of Applied Physics 97 (9), 2005 | 795* | 2005 |
| Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes H Hirayama, N Maeda, S Fujikawa, S Toyoda, N Kamata Japanese Journal of Applied Physics 53 (10), 100209, 2014 | 569 | 2014 |
| 222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire H Hirayama, S Fujikawa, N Noguchi, J Norimatsu, T Takano, K Tsubaki, ... physica status solidi (a) 206 (6), 1176-1182, 2009 | 511 | 2009 |
| Recent progress in AlGaN‐based deep‐UV LEDs H Hirayama, S Fujikawa, N Kamata Electronics and Communications in Japan 98 (5), 1-8, 2015 | 154 | 2015 |
| Fabrication of a low threading dislocation density ELO‐AlN template for application to deep‐UV LEDs H Hirayama, S Fujikawa, J Norimatsu, T Takano, K Tsubaki, N Kamata physica status solidi c 6 (S2 2), S356-S359, 2009 | 111 | 2009 |
| Milliwatt power 270 nm‐band AlGaN deep‐UV LEDs fabricated on ELO‐AlN templates H Hirayama, J Norimatsu, N Noguchi, S Fujikawa, T Takano, K Tsubaki, ... physica status solidi c 6 (S2 2), S474-S477, 2009 | 35 | 2009 |
| 284–300 nm quaternary InAlGaN-based deep-ultraviolet light-emitting diodes on Si (111) substrates S Fujikawa, H Hirayama Applied physics express 4 (6), 061002, 2011 | 33 | 2011 |
| Realization of 340-nm-band high-output-power (> 7 mW) InAlGaN quantum well ultraviolet light-emitting diode with p-type InAlGaN S Fujikawa, T Takano, Y Kondo, H Hirayama Japanese journal of applied physics 47 (4S), 2941, 2008 | 28 | 2008 |
| Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters MA Khan, JP Bermundo, Y Ishikawa, H Ikenoue, S Fujikawa, E Matsuura, ... Nanotechnology 32 (5), 055702, 2020 | 27 | 2020 |
| Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates T Matsumoto, MA Khan, N Maeda, S Fujikawa, N Kamata, H Hirayama Journal of Physics D: Applied Physics 52 (11), 115102, 2019 | 27 | 2019 |
| 222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template H Hirayama, N Noguchi, S Fujikawa, J Norimatsu, N Kamata, T Takano, ... Gallium Nitride Materials and Devices IV 7216, 301-314, 2009 | 26 | 2009 |
| Light emitting element and method for manufacturing same Y Kashima, E Matsuura, H Nishihara, T Tashiro, T Ookawa, H Hirayama, ... US Patent 9,349,918, 2016 | 20 | 2016 |
| Nitride semi-conductor light emitting device and a process of producing a nitride semi-conductor light emitting device T Takano, K Tsubaki, H Hirayama, S Fujikawa US Patent 8,120,013, 2012 | 20 | 2012 |
| Effect of low‐temperature‐grown GaSb layer on formation of high‐density and small GaSb islands on Si (100) substrate R Machida, R Toda, S Fujikawa, S Hara, I Watanabe, HI Fujishiro physica status solidi (b) 253 (4), 648-653, 2016 | 14 | 2016 |
| High‐efficiency AlGaN deep‐UV LEDs fabricated on a‐and m‐axis oriented c‐plane sapphire substrates S Fujikawa, H Hirayama, N Maeda physica status solidi c 9 (3‐4), 790-793, 2012 | 13 | 2012 |
| Effects of ultraviolet B irradiation on cell–cell interaction; implication of morphological changes and actin filaments in irradiated cells TL Maekawa, TA Takahashi, M Fujihara, J Akasaka, S Fujikawa, ... Clinical & Experimental Immunology 105 (2), 389-396, 1996 | 13 | 1996 |
| Quaternary InAlGaN quantum‐dot ultraviolet light‐emitting diode emitting at 335 nm fabricated by anti‐surfactant method H Hirayama, S Fujikawa physica status solidi c 5 (6), 2312-2315, 2008 | 12 | 2008 |
| Effects of Ga-induced reconstructed surfaces and atomic steps on the morphology of GaSb islands on Si (1 0 0) R Machida, R Toda, S Fujikawa, S Hara, I Watanabe, HI Fujishiro Applied Surface Science 351, 686-692, 2015 | 11 | 2015 |
| Comparative study on nano‐scale III‐V double‐gate MOSFETs with various channel materials A Nishida, K Hasegawa, R Ohama, S Fujikawa, S Hara, HI Fujishiro physica status solidi (c) 10 (11), 1413-1416, 2013 | 10 | 2013 |
| Surface cleaning and pure nitridation of GaSb by in-situ plasma processing T Gotow, S Fujikawa, HI Fujishiro, M Ogura, WH Chang, T Yasuda, ... AIP Advances 7 (10), 2017 | 9 | 2017 |
Hideki HirayamaRIKENVerified email at riken.jp
Hideki HirayamaRIKENVerified email at riken.jp