Koichi Kakimoto
Koichi Kakimoto
確認したメール アドレス: riam.kyushu-u.ac.jp - ホームページ
タイトル引用先
The development of crystal growth technology
HJ Scheel
Crystal Growth Technology, 3-14, 2003
2572003
The development of crystal growth technology
HJ Scheel
Crystal Growth Technology, 3-14, 2003
2572003
The development of crystal growth technology
HJ Scheel
Crystal Growth Technology, 3-14, 2003
2572003
The development of crystal growth technology
HJ Scheel
Crystal Growth Technology, 3-14, 2003
2572003
Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model
L Liu, K Kakimoto
International Journal of Heat and Mass Transfer 48 (21-22), 4481-4491, 2005
1142005
Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells
L Liu, S Nakano, K Kakimoto
Journal of Crystal Growth 310 (7-9), 2192-2197, 2008
1012008
Direct observation by X-ray radiography of convection of molten silicon in the Czochralski growth method
K Kakimoto, M Eguchi, H Watanabe, T Hibiya
Journal of Crystal Growth 88 (3), 365-370, 1988
1011988
Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal
A Nagaoka, H Miyake, T Taniyama, K Kakimoto, Y Nose, MA Scarpulla, ...
Applied Physics Letters 104 (15), 152101, 2014
962014
Temperature fluctuations of the Marangoni flow in a liquid bridge of molten silicon under microgravity on board the TR-IA-4 rocket
S Nakamura, T Hibiya, K Kakimoto, N Imaishi, S Nishizawa, A Hirata, ...
Journal of Crystal Growth 186 (1-2), 85-94, 1998
941998
Raman spectra from Ga1−xInxAs epitaxial layers grown on GaAs and InP substrates
K Kakimoto, T Katoda
Applied Physics Letters 40 (9), 826-828, 1982
901982
Temperature and energy dependences of capture cross sections at surface states in Si metal‐oxide‐semiconductor diodes measured by deep level transient spectroscopy
T Katsube, K Kakimoto, T Ikoma
Journal of Applied Physics 52 (5), 3504-3508, 1981
841981
Spoke patterns on molten silicon in Czochralski system
KW Yi, K Kakimoto, M Eguchi, M Watanabe, T Shyo, T Hibiya
Journal of crystal growth 144 (1-2), 20-28, 1994
821994
Crystal growth processes based on capillarity: Czochralski, floating zone, shaping and crucible techniques
T Duffar
John Wiley & Sons, 2010
792010
Natural and forced convection of molten silicon during Czochralski single crystal growth
K Kakimoto, M Eguchi, H Watanabe, T Hibiya
Journal of Crystal Growth 94 (2), 412-420, 1989
761989
Sap flow and tree conductance of shelter-belt in arid region of China
X Chang, W Zhao, Z Zhang, Y Su
Agricultural and Forest Meteorology 138 (1-4), 132-141, 2006
732006
Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells
B Gao, XJ Chen, S Nakano, K Kakimoto
Journal of Crystal Growth 312 (9), 1572-1576, 2010
692010
Study on thermal stress in a silicon ingot during a unidirectional solidification process
XJ Chen, S Nakano, LJ Liu, K Kakimoto
Journal of Crystal Growth 310 (19), 4330-4335, 2008
662008
Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global model
L Liu, S Nakano, K Kakimoto
Journal of Crystal Growth 292 (2), 515-518, 2006
632006
Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic fields
K Kakimoto, KW Yi, M Eguchi
Journal of crystal growth 163 (3), 238-242, 1996
601996
Condensed Matter: Structure, Mechanical and Thermal Properties-Observation of Low-Temperature Elastic Softening due to Vacancy in Crystalline Silicon
T Goto, H Yamada-Kaneta, Y Saito, Y Nemoto, K Sato, K Kakimoto, ...
Journal of the Physical Society of Japan 75 (4), 44602-44602, 2006
592006
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論文 1–20