フォロー
Takao Shimizu
Takao Shimizu
確認したメール アドレス: nims.go.jp
タイトル
引用先
引用先
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ...
Journal of Applied Physics 118 (7), 2015
5942015
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film
T Shimizu, K Katayama, T Kiguchi, A Akama, TJ Konno, O Sakata, ...
Scientific reports 6 (1), 32931, 2016
2812016
Impact of mechanical stress on ferroelectricity in (Hf0. 5Zr0. 5) O2 thin films
T Shiraishi, K Katayama, T Yokouchi, T Shimizu, T Oikawa, O Sakata, ...
Applied Physics Letters 108 (26), 2016
2712016
Effects of deposition conditions on the ferroelectric properties of (Al1− xScx) N thin films
S Yasuoka, T Shimizu, A Tateyama, M Uehara, H Yamada, M Akiyama, ...
Journal of Applied Physics 128 (11), 2020
2022020
Growth of epitaxial orthorhombic YO1. 5-substituted HfO2 thin film
T Shimizu, K Katayama, T Kiguchi, A Akama, TJ Konno, H Funakubo
Applied Physics Letters 107 (3), 2015
1762015
Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films
T Shimizu, T Mimura, T Kiguchi, T Shiraishi, T Konno, Y Katsuya, ...
Applied Physics Letters 113 (21), 2018
982018
Contribution of oxygen vacancies to the ferroelectric behavior of Hf0. 5Zr0. 5O2 thin films
T Shimizu, T Yokouchi, T Oikawa, T Shiraishi, T Kiguchi, A Akama, ...
Applied Physics Letters 106 (11), 2015
952015
Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0. 5Zr0. 5O2 thin film on Ir electrode
T Shimizu, T Yokouchi, T Shiraishi, T Oikawa, PSSR Krishnan, ...
Japanese Journal of Applied Physics 53 (9S), 09PA04, 2014
942014
Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films
K Katayama, T Shimizu, O Sakata, T Shiraishi, S Nakamura, T Kiguchi, ...
Journal of Applied Physics 119 (13), 2016
882016
Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices
K Katayama, T Shimizu, O Sakata, T Shiraishi, S Nakamura, T Kiguchi, ...
Applied Physics Letters 109 (11), 2016
842016
Ferroelectricity in wurtzite structure simple chalcogenide
H Moriwake, A Konishi, T Ogawa, K Fujimura, CAJ Fisher, A Kuwabara, ...
Applied Physics Letters 104 (24), 2014
822014
Ferroelectricity in YO1. 5-HfO2 films around 1 μm in thickness
T Mimura, T Shimizu, H Funakubo
Applied Physics Letters 115 (3), 2019
792019
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ...
APL Materials 11 (8), 2023
722023
Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films
T Mimura, T Shimizu, H Uchida, O Sakata, H Funakubo
Applied Physics Letters 113 (10), 2018
632018
Epitaxial growth of metastable multiferroic AlFeO3 film on SrTiO3 (111) substrate
Y Hamasaki, T Shimizu, H Taniguchi, T Taniyama, S Yasui, M Itoh
Applied Physics Letters 104 (8), 2014
592014
Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO2 Thin Film Capacitors
P Buragohain, A Erickson, T Mimura, T Shimizu, H Funakubo, ...
Advanced Functional Materials 32 (9), 2108876, 2022
542022
Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0. 5Zr0. 5) O2 thin films deposited on various substrates
T Shiraishi, K Katayama, T Yokouchi, T Shimizu, T Oikawa, O Sakata, ...
Materials Science in Semiconductor Processing 70, 239-245, 2017
532017
Mechanism of polarization switching in wurtzite-structured zinc oxide thin films
A Konishi, T Ogawa, CAJ Fisher, A Kuwabara, T Shimizu, S Yasui, M Itoh, ...
Applied Physics Letters 109 (10), 2016
512016
Mechanism for suppression of ferroelectricity in CdCaTiO
H Taniguchi, HP Soon, T Shimizu, H Moriwake, YJ Shan, M Itoh
Physical Review B—Condensed Matter and Materials Physics 84 (17), 174106, 2011
502011
Thickness scaling of (Al0. 8Sc0. 2) N films with remanent polarization beyond 100 μC cm− 2 around 10 nm in thickness
R Mizutani, S Yasuoka, T Shiraishi, T Shimizu, M Uehara, H Yamada, ...
Applied Physics Express 14 (10), 105501, 2021
482021
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