| Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 2015 | 552 | 2015 |
| The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film T Shimizu, K Katayama, T Kiguchi, A Akama, TJ Konno, O Sakata, ... Scientific reports 6 (1), 32931, 2016 | 263 | 2016 |
| Impact of mechanical stress on ferroelectricity in (Hf0. 5Zr0. 5) O2 thin films T Shiraishi, K Katayama, T Yokouchi, T Shimizu, T Oikawa, O Sakata, ... Applied Physics Letters 108 (26), 2016 | 250 | 2016 |
| Growth of epitaxial orthorhombic YO1. 5-substituted HfO2 thin film T Shimizu, K Katayama, T Kiguchi, A Akama, TJ Konno, H Funakubo Applied Physics Letters 107 (3), 2015 | 173 | 2015 |
| Effects of deposition conditions on the ferroelectric properties of (Al1− xScx) N thin films S Yasuoka, T Shimizu, A Tateyama, M Uehara, H Yamada, M Akiyama, ... Journal of Applied Physics 128 (11), 2020 | 172 | 2020 |
| Contribution of oxygen vacancies to the ferroelectric behavior of Hf0. 5Zr0. 5O2 thin films T Shimizu, T Yokouchi, T Oikawa, T Shiraishi, T Kiguchi, A Akama, ... Applied Physics Letters 106 (11), 2015 | 89 | 2015 |
| Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0. 5Zr0. 5O2 thin film on Ir electrode T Shimizu, T Yokouchi, T Shiraishi, T Oikawa, PSSR Krishnan, ... Japanese Journal of Applied Physics 53 (9S), 09PA04, 2014 | 89 | 2014 |
| Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films T Shimizu, T Mimura, T Kiguchi, T Shiraishi, T Konno, Y Katsuya, ... Applied Physics Letters 113 (21), 2018 | 85 | 2018 |
| Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films K Katayama, T Shimizu, O Sakata, T Shiraishi, S Nakamura, T Kiguchi, ... Journal of Applied Physics 119 (13), 2016 | 84 | 2016 |
| Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices K Katayama, T Shimizu, O Sakata, T Shiraishi, S Nakamura, T Kiguchi, ... Applied Physics Letters 109 (11), 2016 | 78 | 2016 |
| Ferroelectricity in YO1. 5-HfO2 films around 1 μm in thickness T Mimura, T Shimizu, H Funakubo Applied Physics Letters 115 (3), 2019 | 77 | 2019 |
| Ferroelectricity in wurtzite structure simple chalcogenide H Moriwake, A Konishi, T Ogawa, K Fujimura, CAJ Fisher, A Kuwabara, ... Applied Physics Letters 104 (24), 2014 | 74 | 2014 |
| Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films T Mimura, T Shimizu, H Uchida, O Sakata, H Funakubo Applied Physics Letters 113 (10), 2018 | 58 | 2018 |
| Epitaxial growth of metastable multiferroic AlFeO3 film on SrTiO3 (111) substrate Y Hamasaki, T Shimizu, H Taniguchi, T Taniyama, S Yasui, M Itoh Applied Physics Letters 104 (8), 2014 | 56 | 2014 |
| Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0. 5Zr0. 5) O2 thin films deposited on various substrates T Shiraishi, K Katayama, T Yokouchi, T Shimizu, T Oikawa, O Sakata, ... Materials Science in Semiconductor Processing 70, 239-245, 2017 | 51 | 2017 |
| Mechanism for suppression of ferroelectricity in CdCaTiO H Taniguchi, HP Soon, T Shimizu, H Moriwake, YJ Shan, M Itoh Physical Review B—Condensed Matter and Materials Physics 84 (17), 174106, 2011 | 50 | 2011 |
| Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO2 Thin Film Capacitors P Buragohain, A Erickson, T Mimura, T Shimizu, H Funakubo, ... Advanced Functional Materials 32 (9), 2108876, 2022 | 46 | 2022 |
| Mechanism of polarization switching in wurtzite-structured zinc oxide thin films A Konishi, T Ogawa, CAJ Fisher, A Kuwabara, T Shimizu, S Yasui, M Itoh, ... Applied Physics Letters 109 (10), 2016 | 46 | 2016 |
| Roadmap on ferroelectric hafnia-and zirconia-based materials and devices JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ... APL Materials 11 (8), 2023 | 44 | 2023 |
| Effects of heat treatment and in situ high-temperature X-ray diffraction study on the formation of ferroelectric epitaxial Y-doped HfO2 film T Mimura, T Shimizu, T Kiguchi, A Akama, TJ Konno, Y Katsuya, O Sakata, ... Japanese Journal of Applied Physics 58 (SB), SBBB09, 2019 | 42 | 2019 |
Hiroshi FunakuboTokyo Institute of Technology確認したメール アドレス: m.titech.ac.jp
