| Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 2015 | 476 | 2015 |
| The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film T Shimizu, K Katayama, T Kiguchi, A Akama, TJ Konno, O Sakata, ... Scientific reports 6 (1), 32931, 2016 | 234 | 2016 |
| Impact of mechanical stress on ferroelectricity in (Hf0. 5Zr0. 5) O2 thin films T Shiraishi, K Katayama, T Yokouchi, T Shimizu, T Oikawa, O Sakata, ... Applied Physics Letters 108 (26), 2016 | 198 | 2016 |
| Growth of epitaxial orthorhombic YO1. 5-substituted HfO2 thin film T Shimizu, K Katayama, T Kiguchi, A Akama, TJ Konno, H Funakubo Applied Physics Letters 107 (3), 2015 | 139 | 2015 |
| Effects of deposition conditions on the ferroelectric properties of (Al1− xScx) N thin films S Yasuoka, T Shimizu, A Tateyama, M Uehara, H Yamada, M Akiyama, ... Journal of Applied Physics 128 (11), 2020 | 126 | 2020 |
| Contribution of oxygen vacancies to the ferroelectric behavior of Hf0. 5Zr0. 5O2 thin films T Shimizu, T Yokouchi, T Oikawa, T Shiraishi, T Kiguchi, A Akama, ... Applied Physics Letters 106 (11), 2015 | 79 | 2015 |
| Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0. 5Zr0. 5O2 thin film on Ir electrode T Shimizu, T Yokouchi, T Shiraishi, T Oikawa, PSSR Krishnan, ... Japanese journal of applied physics 53 (9S), 09PA04, 2014 | 79 | 2014 |
| Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films T Shimizu, T Mimura, T Kiguchi, T Shiraishi, T Konno, Y Katsuya, ... Applied Physics Letters 113 (21), 2018 | 69 | 2018 |
| Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films K Katayama, T Shimizu, O Sakata, T Shiraishi, S Nakamura, T Kiguchi, ... Journal of Applied Physics 119 (13), 2016 | 67 | 2016 |
| Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices K Katayama, T Shimizu, O Sakata, T Shiraishi, S Nakamura, T Kiguchi, ... Applied Physics Letters 109 (11), 2016 | 65 | 2016 |
| Ferroelectricity in YO1. 5-HfO2 films around 1 μm in thickness T Mimura, T Shimizu, H Funakubo Applied Physics Letters 115 (3), 2019 | 59 | 2019 |
| Ferroelectricity in wurtzite structure simple chalcogenide H Moriwake, A Konishi, T Ogawa, K Fujimura, CAJ Fisher, A Kuwabara, ... Applied Physics Letters 104 (24), 2014 | 56 | 2014 |
| Epitaxial growth of metastable multiferroic AlFeO3 film on SrTiO3 (111) substrate Y Hamasaki, T Shimizu, H Taniguchi, T Taniyama, S Yasui, M Itoh Applied Physics Letters 104 (8), 2014 | 55 | 2014 |
| Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films T Mimura, T Shimizu, H Uchida, O Sakata, H Funakubo Applied Physics Letters 113 (10), 2018 | 53 | 2018 |
| Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0. 5Zr0. 5) O2 thin films deposited on various substrates T Shiraishi, K Katayama, T Yokouchi, T Shimizu, T Oikawa, O Sakata, ... Materials Science in Semiconductor Processing 70, 239-245, 2017 | 47 | 2017 |
| Mechanism for suppression of ferroelectricity in Cd 1− x Ca x TiO 3 H Taniguchi, HP Soon, T Shimizu, H Moriwake, YJ Shan, M Itoh Physical Review B 84 (17), 174106, 2011 | 45 | 2011 |
| Comparative study of phase transitions in BaTiO3 thin films grown on (001)-and (110)-oriented SrTiO3 substrate T Shimizu, D Suwama, H Taniguchi, T Taniyama, M Itoh Journal of Physics: Condensed Matter 25 (13), 132001, 2013 | 36 | 2013 |
| Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing T Mimura, K Katayama, T Shimizu, H Uchida, T Kiguchi, A Akama, ... Applied Physics Letters 109 (5), 2016 | 35 | 2016 |
| Effects of heat treatment and in situ high-temperature X-ray diffraction study on the formation of ferroelectric epitaxial Y-doped HfO2 film T Mimura, T Shimizu, T Kiguchi, A Akama, TJ Konno, Y Katsuya, O Sakata, ... Japanese journal of applied physics 58 (SB), SBBB09, 2019 | 34 | 2019 |
| Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method T Mimura, T Shimizu, H Uchida, H Funakubo Applied Physics Letters 116 (6), 2020 | 31 | 2020 |
Hiroshi FunakuboTokyo Institute of Technology確認したメール アドレス: m.titech.ac.jp
