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Joerg Appenzeller
Joerg Appenzeller
Professor of Electrical and Computer Engineering, Purdue University
在 purdue.edu 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
High Performance Multilayer MoS2 Transistors with Scandium Contacts
S Das, HY Chen, AV Penumatcha, J Appenzeller
Nano letters 13 (1), 100-105, 2013
23102013
Carbon nanotubes as Schottky barrier transistors
S Heinze, J Tersoff, R Martel, V Derycke, J Appenzeller, P Avouris
Physical Review Letters 89 (10), 106801, 2002
16532002
Carbon nanotube inter-and intramolecular logic gates
V Derycke, R Martel, J Appenzeller, P Avouris
Nano letters 1 (9), 453-456, 2001
16362001
Ambipolar electrical transport in semiconducting single-wall carbon nanotubes
R Martel, V Derycke, C Lavoie, J Appenzeller, KK Chan, J Tersoff, ...
Physical review letters 87 (25), 256805, 2001
10312001
Band-to-band tunneling in carbon nanotube field-effect transistors
J Appenzeller, YM Lin, J Knoch, P Avouris
Physical review letters 93 (19), 196805, 2004
10182004
Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes
SJ Wind, J Appenzeller, R Martel, V Derycke, P Avouris
Applied Physics Letters 80 (20), 3817-3819, 2002
10132002
Carbon nanotube electronics
P Avouris, J Appenzeller, R Martel, SJ Wind
Proceedings of the IEEE 91 (11), 1772-1784, 2003
9482003
Controlling doping and carrier injection in carbon nanotube transistors
V Derycke, R Martel, J Appenzeller, P Avouris
Applied Physics Letters 80 (15), 2773-2775, 2002
9222002
The role of metal− nanotube contact in the performance of carbon nanotube field-effect transistors
Z Chen, J Appenzeller, J Knoch, Y Lin, P Avouris
Nano letters 5 (7), 1497-1502, 2005
8372005
An integrated logic circuit assembled on a single carbon nanotube
Z Chen, J Appenzeller, YM Lin, J Sippel-Oakley, AG Rinzler, J Tang, ...
Science 311 (5768), 1735-1735, 2006
7182006
Field-modulated carrier transport in carbon nanotube transistors
J Appenzeller, J Knoch, V Derycke, R Martel, S Wind, P Avouris
Physical Review Letters 89 (12), 126801, 2002
6172002
High-performance carbon nanotube field-effect transistor with tunable polarities
YM Lin, J Appenzeller, J Knoch, P Avouris
IEEE transactions on nanotechnology 4 (5), 481-489, 2005
5772005
Toward nanowire electronics
J Appenzeller, J Knoch, MT Bjork, H Riel, H Schmid, W Riess
IEEE Transactions on electron devices 55 (11), 2827-2845, 2008
4282008
Carbon nanotubes for high-performance electronics—Progress and prospect
J Appenzeller
Proceedings of the IEEE 96 (2), 201-211, 2008
4202008
Comparing carbon nanotube transistors-the ideal choice: a novel tunneling device design
J Appenzeller, YM Lin, J Knoch, Z Chen, P Avouris
IEEE Transactions on Electron Devices 52 (12), 2568-2576, 2005
4102005
WSe2 field effect transistors with enhanced ambipolar characteristics
S Das, J Appenzeller
Applied physics letters 103 (10), 103501, 2013
3902013
Self-aligned nanotube field effect transistor and method of fabricating same
J Appenzeller, P Avouris, KK Chan, R Martel, HP Wong, PG Collins
US Patent 6,891,227, 2005
3482005
Tunneling versus thermionic emission in one-dimensional semiconductors
J Appenzeller, M Radosavljević, J Knoch, P Avouris
Physical review letters 92 (4), 048301, 2004
3482004
Screening and interlayer coupling in multilayer graphene field-effect transistors
Y Sui, J Appenzeller
Nano letters 9 (8), 2973-2977, 2009
3342009
Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
J Knoch, S Mantl, J Appenzeller
Solid-State Electronics 51 (4), 572-578, 2007
3152007
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