Hideo Hosono
Hideo Hosono
Professor, Materials and Structures Laboratory, Tokyo Institute of Technology
確認したメール アドレス: lucid.msl.titech.ac.jp
タイトル
引用先
引用先
Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K
Y Kamihara, T Watanabe, M Hirano, H Hosono
Journal of the American Chemical Society 130 (11), 3296-3297, 2008
9197*2008
Iron-Based Layered Superconductor La[O1-xFx]FeAs (x = 0.05−0.12) with Tc = 26 K
Y Kamihara, T Watanabe, M Hirano, H Hosono
Journal of the American Chemical Society 130 (11), 3296-3297, 2008
87332008
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono
nature 432 (7016), 488-492, 2004
69272004
Amorphous Oxide And Thin Film Transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 10/592,431, 2007
33962007
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
H Hosono, H Ota, M Orita, K Ueda, M Hirano, T Kamiya
US Patent 7,061,014, 2006
33662006
Display
H Kumomi, H Hosono, T Kamiya, K Nomura
US Patent 7,791,072, 2010
33172010
Integrated circuits utilizing amorphous oxides
K Abe, H Hosono, T Kamiya, K Nomura
US Patent 7,863,611, 2011
33002011
Amorphous oxide and field effect transistor
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent App. 11/269,600, 2006
32912006
Field effect transistor
M Sano, K Nakagawa, H Hosono, T Kamiya, K Nomura
US Patent 7,868,326, 2011
32902011
Light-emitting device
T Den, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,872,259, 2011
32862011
Oxide thin film
H Kawazoe, H Hosono, A Kudo, H Yanagi
US Patent 6,294,274, 2001
32862001
Field effect transistor manufacturing method
H Yabuta, M Sano, T Iwasaki, H Hosono, T Kamiya, K Nomura
US Patent 7,829,444, 2010
32852010
Sensor and image pickup device
K Saito, H Hosono, T Kamiya, K Nomura
US Patent 7,453,065, 2008
32712008
LnCuO (S, Se, Te) monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
H Hosono, M Hirano, H Ota, M Orita, H Hiramatsu, K Ueda
US Patent 7,323,356, 2008
32342008
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent 10,032,930, 2018
32302018
Amorphous oxide and thin film transistor
H Hosono, M Hirano, H Ota, T Kamiya, K Nomura
US Patent App. 12/504,158, 2009
32252009
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor
K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono
Science 300 (5623), 1269-1272, 2003
26692003
P-type electrical conduction in transparent thin films of CuAlO 2
H Kawazoe, M Yasukawa, H Hyodo, M Kurita, H Yanagi, H Hosono
Nature 389 (6654), 939-942, 1997
20361997
Present status of amorphous In–Ga–Zn–O thin-film transistors
T Kamiya, K Nomura, H Hosono
Science and Technology of Advanced Materials, 2010
15232010
Superconductivity at 43 K in an iron-based layered compound LaO 1-x F x FeAs
H Takahashi, K Igawa, K Arii, Y Kamihara, M Hirano, H Hosono
Nature 453 (7193), 376-378, 2008
14452008
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論文 1–20