| On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration S Takagi, A Toriumi, M Iwase, H Tango IEEE Transactions on Electron Devices 41 (12), 2357-2362, 1994 | 1656 | 1994 |
| Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's T Mizuno, J Okumtura, A Toriumi IEEE Transactions on Electron Devices 41 (11), 2216-2221, 1994 | 705 | 1994 |
| Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface T Nishimura, K Kita, A Toriumi Applied Physics Letters 91 (12), 2007 | 583 | 2007 |
| On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation S Takagi, A Toriumi, M Iwase, H Tango IEEE Transactions on Electron Devices 41 (12), 2363-2368, 1994 | 445 | 1994 |
| Origin of electric dipoles formed at high-k/SiO2 interface K Kita, A Toriumi Applied Physics Letters 94 (13), 2009 | 436 | 2009 |
| Contact resistivity and current flow path at metal/graphene contact K Nagashio, T Nishimura, K Kita, A Toriumi Applied Physics Letters 97 (14), 2010 | 415 | 2010 |
| Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology T Mizuno, S Takagi, N Sugiyama, H Satake, A Kurobe, A Toriumi IEEE Electron Device Letters 21 (5), 230-232, 2000 | 295 | 2000 |
| Direct evidence of GeO volatilization from GeO2/Ge and impact of its suppression on GeO2/Ge metal–insulator–semiconductor characteristics K Kita, S Suzuki, H Nomura, T Takahashi, T Nishimura, A Toriumi Japanese journal of applied physics 47 (4S), 2349, 2008 | 282 | 2008 |
| A significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film T Nishimura, K Kita, A Toriumi Applied physics express 1 (5), 051406, 2008 | 264 | 2008 |
| Chemical structure of the ultrathin interface: An angle-resolved Si photoemission study JH Oh, HW Yeom, Y Hagimoto, K Ono, M Oshima, N Hirashita, M Nywa, ... Physical Review B 63 (20), 205310, 2001 | 250 | 2001 |
| Dielectric constant enhancement due to Si incorporation into HfO2 K Tomida, K Kita, A Toriumi Applied physics letters 89 (14), 2006 | 236 | 2006 |
| Electrical transport properties of graphene on SiO2 with specific surface structures K Nagashio, T Yamashita, T Nishimura, K Kita, A Toriumi Journal of Applied Physics 110 (2), 2011 | 234 | 2011 |
| Permittivity increase of yttrium-doped HfO2 through structural phase transformation K Kita, K Kyuno, A Toriumi Applied Physics Letters 86 (10), 2005 | 227 | 2005 |
| Metal/graphene contact as a performance killer of ultra-high mobility graphene analysis of intrinsic mobility and contact resistance K Nagashio, T Nishimura, K Kita, A Toriumi 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 225 | 2009 |
| Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm X Tian, S Shibayama, T Nishimura, T Yajima, S Migita, A Toriumi Applied Physics Letters 112 (10), 2018 | 224 | 2018 |
| Experimental evidence of inelastic tunneling in stress-induced leakage current S Takagi, N Yasuda, A Toriumi IEEE Transactions on Electron Devices 46 (2), 335-341, 1999 | 220 | 1999 |
| Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon Y Zhao, M Toyama, K Kita, K Kyuno, A Toriumi Applied Physics Letters 88 (7), 2006 | 217 | 2006 |
| Desorption kinetics of GeO from GeO2/Ge structure SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi Journal of applied physics 108 (5), 2010 | 210 | 2010 |
| A study of photon emission from n-channel MOSFET's A Toriumi, M Yoshimi, M Iwase, Y Akiyama, K Taniguchi IEEE Transactions on Electron Devices 34 (7), 1501-1508, 1987 | 203 | 1987 |
| Quantitative understanding of inversion-layer capacitance in Si MOSFET's S Takagi, A Toriumi IEEE Transactions on Electron Devices 42 (12), 2125-2130, 1995 | 199 | 1995 |
