Junqiao Wu
Junqiao Wu
Professor and Chair of Materials Science, University of California, Berkeley
Verified email at - Homepage
Cited by
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Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures
X Hong, J Kim, SF Shi, Y Zhang, C Jin, Y Sun, S Tongay, J Wu, Y Zhang, ...
Nature nanotechnology 9 (9), 682-686, 2014
Unusual properties of the fundamental band gap of InN
J Wu, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, H Lu, WJ Schaff, ...
Applied Physics Letters 80 (21), 3967-3969, 2002
Band offsets and heterostructures of two-dimensional semiconductors
J Kang, S Tongay, J Zhou, J Li, J Wu
Applied Physics Letters 102 (1), 2013
Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
S Tongay, J Zhou, C Ataca, K Lo, TS Matthews, J Li, JC Grossman, J Wu
Nano letters 12 (11), 5576-5580, 2012
When group-III nitrides go infrared: New properties and perspectives
J Wu
Journal of applied physics 106 (1), 2009
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
S Tongay, J Suh, C Ataca, W Fan, A Luce, JS Kang, J Liu, C Ko, ...
Scientific reports 3 (1), 2657, 2013
Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling
S Tongay, H Sahin, C Ko, A Luce, W Fan, K Liu, J Zhou, YS Huang, ...
Nature communications 5 (1), 3252, 2014
Small band gap bowing in alloys
J Wu, W Walukiewicz, KM Yu, JW Ager III, EE Haller, H Lu, WJ Schaff
Applied Physics Letters 80 (25), 4741-4743, 2002
Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers
S Tongay, W Fan, J Kang, J Park, U Koldemir, J Suh, DS Narang, K Liu, ...
Nano letters 14 (6), 3185-3190, 2014
Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating
S Tongay, J Zhou, C Ataca, J Liu, JS Kang, TS Matthews, L You, J Li, ...
Nano letters 13 (6), 2831-2836, 2013
Superior radiation resistance of alloys: Full-solar-spectrum photovoltaic material system
J Wu, W Walukiewicz, KM Yu, W Shan, JW Ager Iii, EE Haller, H Lu, ...
Journal of Applied Physics 94 (10), 6477-6482, 2003
Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ...
Nano letters 14 (12), 6976-6982, 2014
Strain engineering and one-dimensional organization of metal–insulator domains in single-crystal vanadium dioxide beams
J Cao, E Ertekin, V Srinivasan, W Fan, S Huang, H Zheng, JWL Yim, ...
Nature nanotechnology 4 (11), 732-737, 2009
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures
K Liu, Q Yan, M Chen, W Fan, Y Sun, J Suh, D Fu, S Lee, J Zhou, ...
Nano letters 14 (9), 5097-5103, 2014
Effects of the narrow band gap on the properties of InN
J Wu, W Walukiewicz, W Shan, KM Yu, JW Ager III, EE Haller, H Lu, ...
Physical Review B 66 (20), 201403, 2002
Anomalous Raman spectra and thickness-dependent electronic properties of WSe
H Sahin, S Tongay, S Horzum, W Fan, J Zhou, J Li, J Wu, FM Peeters
Physical Review B 87 (16), 165409, 2013
Temperature dependence of the fundamental band gap of InN
J Wu, W Walukiewicz, W Shan, KM Yu, JW Ager, SX Li, EE Haller, H Lu, ...
Journal of Applied Physics 94 (7), 4457-4460, 2003
Valence-band anticrossing in mismatched III-V semiconductor alloys
K Alberi, J Wu, W Walukiewicz, KM Yu, OD Dubon, SP Watkins, CX Wang, ...
Physical review B 75 (4), 045203, 2007
Efficient photovoltaic current generation at ferroelectric domain walls
J Seidel, D Fu, SY Yang, E Alarcón-Lladó, J Wu, R Ramesh, JW Ager III
Physical review letters 107 (12), 126805, 2011
Band anticrossing in highly mismatched III–V semiconductor alloys
J Wu, W Shan, W Walukiewicz
Semiconductor Science and Technology 17 (8), 860, 2002
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