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Josef Gerhard Müller
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年份
The hydrogen content of a-Ge: H and a-Si: H as determined by IR spectroscopy, gas evolution and nuclear reaction techniques
CJ Fang, KJ Gruntz, L Ley, M Cardona, FJ Demond, G Müller, S Kalbitzer
Journal of Non-Crystalline Solids 35, 255-260, 1980
935*1980
Gas-kinetic interactions of nitrous oxides with SnO2 surfaces
B Ruhland, T Becker, G Müller
Sensors and Actuators B: Chemical 50 (1), 85-94, 1998
3271998
Hydrogen response mechanism of Pt–GaN Schottky diodes
J Schalwig, G Müller, U Karrer, M Eickhoff, O Ambacher, M Stutzmann, ...
Applied Physics Letters 80 (7), 1222-1224, 2002
2762002
Gas sensitive GaN/AlGaN-heterostructures
J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann
Sensors and Actuators B: Chemical 87 (3), 425-430, 2002
2732002
GaN-based heterostructures for sensor applications
M Stutzmann, G Steinhoff, M Eickhoff, O Ambacher, CE Nebel, J Schalwig, ...
Diamond and related materials 11 (3-6), 886-891, 2002
2422002
A rate equation approach to the gas sensitivity of thin film metal oxide materials
S Ahlers, G Müller, T Doll
Sensors and Actuators B: Chemical 107 (2), 587-599, 2005
2042005
GroupIIInitride based gas sensing devices
J Schalwig, G Müller, O Ambacher, M Stutzmann
physica status solidi (a) 185 (1), 39-45, 2001
1992001
Gas sensing properties of thin-and thick-film tin-oxide materials
T Becker, S Ahlers, CB Braunmühl, G Müller, O Kiesewetter
Sensors and Actuators B: Chemical 77 (1-2), 55-61, 2001
1982001
Highelectronmobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications
R Neuberger, G Müller, O Ambacher, M Stutzmann
physica status solidi (a) 185 (1), 85-89, 2001
1712001
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures–Part B: Sensor applications
M Eickhoff, J Schalwig, G Steinhoff, O Weidemann, L Görgens, ...
physica status solidi (c), 1908-1918, 2003
1702003
Air pollution monitoring using tin-oxide-based microreactor systems
T Becker, ST Mühlberger, CB Braunmühl, G Müller, T Ziemann, ...
Sensors and Actuators B: Chemical 69 (1-2), 108-119, 2000
1522000
Silicon hotplates for metal oxide gas sensor elements
G Sberveglieri, W Hellmich, G Müller
Microsystem Technologies 3, 183-190, 1997
1361997
Group III-nitride-based gas sensors for combustion monitoring
J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann
Materials Science and Engineering: B 93 (1-3), 207-214, 2002
1312002
Optical pressure sensor based on a Mach-Zehnder interferometer integrated with a lateral a-Si: H pin photodiode
C Wagner, J Frankenberger, PP Deimel
IEEE photonics technology letters 5 (10), 1257-1259, 1993
129*1993
SiC for sensors and high-temperature electronics
G Müller, G Krötz, E Niemann
Sensors and Actuators A: Physical 43 (1-3), 259-268, 1994
1211994
A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon
G Müller, S Kalbitzer, H Mannsperger
Applied Physics A 39 (4), 243-250, 1986
1091986
High-temperature MEMS heater platforms: Long-term performance of metal and semiconductor heater materials
J Spannhake, O Schulz, A Helwig, A Krenkow, G Müller, T Doll
Sensors 6 (4), 405-419, 2006
1072006
Response mechanism of SiC-based MOS field-effect gas sensors
J Schalwig, P Kreisl, S Ahlers, G Muller
IEEE Sensors Journal 2 (5), 394-402, 2002
1062002
The effects of ion implantation on the electrical properties of amorphous silicon
S Kalbitzer, G Müller, PG Le Comber, WE Spear
Philosophical Magazine B 41 (4), 439-456, 1980
1051980
Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon
PA Stolk, FW Saris, AJM Berntsen, WF Van der Weg, LT Sealy, RC Barklie, ...
Journal of Applied Physics 75 (11), 7266-7286, 1994
991994
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