Esmat Farzana
Esmat Farzana
Assistant Professor, Electrical and Computer Engineering, Iowa State University
Verified email at - Homepage
Cited by
Cited by
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z Zhang, E Farzana, AR Arehart, SA Ringel
Applied Physics Letters 108 (5), 2016
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel
Applied Physics Letters 110 (20), 2017
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ...
Physical Review X 9 (4), 041027, 2019
Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3
E Farzana, MF Chaiken, TE Blue, AR Arehart, SA Ringel
Apl Materials 7 (2), 2019
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
E Farzana, E Ahmadi, JS Speck, AR Arehart, SA Ringel
Journal of Applied Physics 123 (16), 2018
Effect of Fe-doping on the structural and optical properties of ZnO thin films prepared by spray pyrolysis
SM Salaken, E Farzana, J Podder
Journal of Semiconductors 34 (7), 073003, 2013
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ...
APL Materials 8 (2), 2020
Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition
E Farzana, F Alema, WY Ho, A Mauze, T Itoh, A Osinsky, JS Speck
Applied Physics Letters 118 (16), 2021
Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
E Farzana, A Mauze, JB Varley, TE Blue, JS Speck, AR Arehart, ...
APL Materials 7 (12), 2019
Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
Z Zhang, E Farzana, WY Sun, J Chen, EX Zhang, DM Fleetwood, ...
Journal of Applied Physics 118 (15), 155701, 2015
Adaptive bilateral filtering for despeckling of medical ultrasound images
E Farzana, M Tanzid, KM Mohsin, MIH Bhuiyan, S Hossain
TENCON 2010-2010 IEEE Region 10 Conference, 1728-1733, 2010
Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes
E Farzana, A Bhattacharyya, NS Hendricks, T Itoh, S Krishnamoorthy, ...
APL Materials 10 (11), 2022
Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications
JS Speck, E Farzana
AIP Publishing LLC, 2023
Over 1 kV vertical GaN-on-GaN pn diodes with low on-resistance using ammonia molecular beam epitaxy
E Farzana, J Wang, M Monavarian, T Itoh, KS Qwah, ZJ Biegler, ...
IEEE Electron Device Letters 41 (12), 1806-1809, 2020
Thermal Management of β-Ga₂O₃ Current Aperture Vertical Electron Transistors
S Kim, Y Zhang, C Yuan, R Montgomery, A Mauze, J Shi, E Farzana, ...
IEEE Transactions on Components, Packaging and Manufacturing Technology 11 …, 2021
Low-energy ion-induced single-event burnout in gallium oxide Schottky diodes
RM Cadena, DR Ball, EX Zhang, S Islam, A Senarath, MW McCurdy, ...
IEEE Transactions on Nuclear Science 70 (4), 363-369, 2023
Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage
E Farzana, S Roy, NS Hendricks, S Krishnamoorthy, JS Speck
Applied Physics Letters 123 (19), 2023
Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown
NS Hendricks, E Farzana, AE Islam, KD Leedy, KJ Liddy, J Williams, ...
Applied Physics Express 16 (7), 071002, 2023
Bilateral filtering with adaptation to phase coherence and noise
E Farzana, M Tanzid, KM Mohsin, MIH Bhuiyan
Signal, Image and Video Processing 7, 367-376, 2013
paper presented at 2nd International Workshop on Ga2O3 and Related Materials
AA Arehart, E Farzana, TE Blue, SA Ringel
Parma, Italy, September, 2017
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