フォロー
Davide Campi
Davide Campi
確認したメール アドレス: unimib.it
タイトル
引用先
引用先
Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
N Mounet, M Gibertini, P Schwaller, D Campi, A Merkys, A Marrazzo, ...
Nature nanotechnology 13 (3), 246-252, 2018
15982018
Equipartition of energy defines the size–thickness relationship in liquid-exfoliated nanosheets
C Backes, D Campi, BM Szydlowska, K Synnatschke, E Ojala, ...
ACS nano 13 (6), 7050-7061, 2019
1482019
Mobility of two-dimensional materials from first principles in an accurate and automated framework
T Sohier, D Campi, N Marzari, M Gibertini
Physical Review Materials 2 (11), 114010, 2018
1342018
Large-scale synthesis of crystalline g-C3N4 nanosheets and high-temperature H2 sieving from assembled films
LF Villalobos, MT Vahdat, M Dakhchoune, Z Nadizadeh, M Mensi, ...
Science advances 6 (4), eaay9851, 2020
1132020
First-principles calculation of lattice thermal conductivity in crystalline phase change materials: GeTe, Sb2Te3, and Ge2Sb2Te5
D Campi, L Paulatto, G Fugallo, F Mauri, M Bernasconi
Physical Review B 95 (2), 024311, 2017
1112017
Prediction of a large-gap and switchable Kane-Mele quantum spin Hall insulator
A Marrazzo, M Gibertini, D Campi, N Mounet, N Marzari
Physical review letters 120 (11), 117701, 2018
1022018
Elastic properties of a macroscopic graphene sample from phonon dispersion measurements
A Politano, AR Marino, D Campi, D Farias, R Miranda, G Chiarello
Carbon 50 (13), 4903-4910, 2012
1022012
Unveiling the Mechanisms Leading to H2 Production Promoted by Water Decomposition on Epitaxial Graphene at Room Temperature
A Politano, M Cattelan, DW Boukhvalov, D Campi, A Cupolillo, S Agnoli, ...
Acs Nano 10 (4), 4543-4549, 2016
752016
2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope
C Klinkert, Á Szabó, C Stieger, D Campi, N Marzari, M Luisier
ACS nano 14 (7), 8605-8615, 2020
732020
Indium selenide: an insight into electronic band structure and surface excitations
A Politano, D Campi, M Cattelan, I Ben Amara, S Jaziri, A Mazzotti, ...
Scientific reports 7 (1), 3445, 2017
732017
Novel near-infrared emission from crystal defects in MoS2 multilayer flakes
F Fabbri, E Rotunno, E Cinquanta, D Campi, E Bonnini, D Kaplan, ...
Nature communications 7 (1), 13044, 2016
712016
Relative Abundance of Topological Order in Exfoliable Two-Dimensional Insulators
A Marrazzo, M Gibertini, D Campi, N Mounet, N Marzari
Nano letters 19 (12), 8431-8440, 2019
592019
Unveiling mode-selected electron–phonon interactions in metal films by helium atom scattering
G Benedek, M Bernasconi, KP Bohnen, D Campi, EV Chulkov, ...
Physical Chemistry Chemical Physics 16 (16), 7159-7172, 2014
572014
Surface and subsurface phonons of Bi (111) measured with helium atom scattering
A Tamtögl, P Kraus, M Mayrhofer-Reinhartshuber, D Campi, ...
Physical Review B 87 (3), 035410, 2013
552013
Atomistic simulations of the crystallization and aging of GeTe nanowires
S Gabardi, E Baldi, E Bosoni, D Campi, S Caravati, GC Sosso, J Behler, ...
The Journal of Physical Chemistry C 121 (42), 23827-23838, 2017
502017
Electron-phonon interaction and thermal boundary resistance at the crystal-amorphous interface of the phase change compound GeTe
D Campi, D Donadio, GC Sosso, J Behler, M Bernasconi
Journal of Applied Physics 117 (1), 2015
502015
Prediction of Phonon-Mediated Superconductivity with High Critical Temperature in the Two-Dimensional Topological Semimetal W2N3
D Campi, S Kumari, N Marzari
Nano Letters 21 (8), 3435-3442, 2021
402021
Low-energy excitations of graphene on Ru (0 0 0 1)
D Maccariello, D Campi, A Al Taleb, G Benedek, D Farías, M Bernasconi, ...
Carbon 93, 1-10, 2015
382015
Mechanical properties of Bi2Te3 topological insulator investigated by density functional theory and nanoindentation
C Lamuta, D Campi, A Cupolillo, ZS Aliev, MB Babanly, EV Chulkov, ...
Scripta materialia 121, 50-55, 2016
322016
Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels
A Szabo, C Klinkert, D Campi, C Stieger, N Marzari, M Luisier
IEEE Transactions on Electron Devices 65 (10), 4180-4187, 2018
312018
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