フォロー
Young Hwan Lee
Young Hwan Lee
確認したメール アドレス: snu.ac.kr
タイトル
引用先
引用先
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ...
Advanced Materials 27 (11), 1811-1831, 2015
10042015
Review and perspective on ferroelectric HfO2-based thin films for memory applications
MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang
MRS Communications 8 (3), 795-808, 2018
4412018
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ...
Nanoscale 9 (28), 9973-9986, 2017
3102017
Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer
HJ Kim, MH Park, YJ Kim, YH Lee, W Jeon, T Gwon, T Moon, KD Kim, ...
Applied Physics Letters 105 (19), 192903, 2014
2482014
A study on the wake-up effect of ferroelectric Hf 0.5 Zr 0.5 O 2 films by pulse-switching measurement
HJ Kim, MH Park, YJ Kim, YH Lee, T Moon, K Do Kim, SD Hyun, ...
Nanoscale 8 (3), 1383-1389, 2016
2422016
Ferroelectricity in undoped-HfO 2 thin films induced by deposition temperature control during atomic layer deposition
KD Kim, MH Park, HJ Kim, YJ Kim, T Moon, YH Lee, SD Hyun, T Gwon, ...
Journal of Materials Chemistry C 4 (28), 6864-6872, 2016
2132016
Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, K Do Kim, SD Hyun, ...
Nanoscale 10 (2), 716-725, 2018
2002018
Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films
MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, F Fengler, ...
ACS applied materials & interfaces 8 (24), 15466-15475, 2016
1972016
Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides
MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang
Advanced Electronic Materials 5 (3), 1800522, 2019
1582019
Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling
MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, CS Hwang
Applied Physics Letters 107 (19), 192907, 2015
1572015
Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films
MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, YH Lee, SD Hyun, CS Hwang
Advanced Materials 28 (36), 7956-7961, 2016
1272016
Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors
K Do Kim, YH Lee, T Gwon, YJ Kim, HJ Kim, T Moon, SD Hyun, HW Park, ...
Nano Energy 39, 390-399, 2017
1062017
Preparation and characterization of ferroelectric Hf0. 5Zr0. 5O2 thin films grown by reactive sputtering
YH Lee, HJ Kim, T Moon, K Do Kim, SD Hyun, HW Park, YB Lee, MH Park, ...
Nanotechnology 28 (30), 305703, 2017
1012017
Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf 0.5 Zr 0.5 O 2 thin films
MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, YH Lee, SD Hyun, CS Hwang
Journal of Materials Chemistry C 3 (24), 6291-6300, 2015
1012015
Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers
YJ Kim, H Yamada, T Moon, YJ Kwon, CH An, HJ Kim, KD Kim, YH Lee, ...
Nano letters 16 (7), 4375-4381, 2016
912016
Voltage drop in a ferroelectric single layer capacitor by retarded domain nucleation
YJ Kim, HW Park, SD Hyun, HJ Kim, KD Kim, YH Lee, T Moon, YB Lee, ...
Nano letters 17 (12), 7796-7802, 2017
722017
Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films
YH Lee, SD Hyun, HJ Kim, JS Kim, C Yoo, T Moon, KD Kim, HW Park, ...
Advanced Electronic Materials 5 (2), 1800436, 2019
682019
Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films
SD Hyun, HW Park, YJ Kim, MH Park, YH Lee, HJ Kim, YJ Kwon, T Moon, ...
ACS applied materials & interfaces 10 (41), 35374-35384, 2018
642018
Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al2O3/Hf0.3Zr0.7O2 Bilayer Thin Film
KD Kim, YJ Kim, MH Park, HW Park, YJ Kwon, YB Lee, HJ Kim, T Moon, ...
Advanced Functional Materials 29 (17), 1808228, 2019
622019
Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure
YJ Kim, MH Park, YH Lee, HJ Kim, W Jeon, T Moon, K Do Kim, DS Jeong, ...
Scientific reports 6, 19039, 2016
582016
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